Electric-Field Driven Insulator-Metal Transition And Tunable Magnetoresistance In Zno Thin Film

Le Zhang,Shanshan Chen,Xiangyang Chen,Zhizhen Ye,Liping Zhu
DOI: https://doi.org/10.1063/1.5021837
IF: 4
2018-01-01
Applied Physics Letters
Abstract:Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices. Published by AIP Publishing.
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