Polarization-dependent Photoinduced Metal-Insulator Transitions in Manganites

Lina Deng,Weiye Zhang,Hanxuan Lin,Lifen Xiang,Ying Xu,Yadi Wang,Qiang Li,Yinyan Zhu,Xiaodong Zhou,Wenbin Wang,Lifeng Yin,Hangwen Guo,Chuanshan Tian,Jian Shen

DOI: https://doi.org/10.1016/j.scib.2023.11.058

IF: 18.9

2024-01-01

Science Bulletin

Abstract:In correlated oxides, collaborative manipulation on light intensity, wavelength, pulse duration and polarization has yielded many exotic discoveries, such as phase transitions and novel quantum states. In view of potential optoelectronic applications, tailoring long-lived static properties by light-induced effects is highly desirable. So far, the polarization state of light has rarely been reported as a control parameter for this purpose. Here, we report polarization-dependent metal-to-insulator transition (MIT) in phase-separated manganite thin films, introducing a new degree of freedom to control static MIT. Specifically, we observed giant photoinduced resistance jumps with striking features: (1) a single resistance jump occurs upon a linearly polarized light incident with a chosen polarization angle, and a second resistance jump occurs when the polarization angle changes; (2) the amplitude of the second resistance jump depends sensitively on the actual change of the polarization angles. Linear transmittance measurements reveal that the origin of the above phenomena is closely related to the coexistence of anisotropic micro-domains. Our results represent a first step to utilize light polarization as an active knob to manipulate static phase transitions, pointing towards new pathways for nonvolatile optoelectronic devices and sensors.