Electrostatic-doping-controlled phase separation in electron-doped manganites

Dong-Dong Xu,Ru-Ru Ma,You-Shan Zhang,Xing Deng,Yuan-Yuan Zhang,Qiu-Xiang Zhu,Ni Zhong,Xiao-Dong Tang,Ping-Hua Xiang,Chun-Gang Duan

DOI: https://doi.org/10.1063/5.0024431

IF: 4

2020-09-28

Applied Physics Letters

Abstract:The coexistence of distinct insulating and metallic phases within the same manganite sample, i.e., phase separation scenario, provides an excellent platform for tailoring the complex electronic and magnetic properties of strongly correlated materials. Here, based on an electric-double-layer transistor configuration, we demonstrate the dynamic control of two entirely different phases—canted <i>G</i>-type antiferromagnetic metal and <i>C</i>-type antiferromagnetic charge/orbital ordered insulator phase—in electron-doped system Ca₁₋_<i>x</i>Ce_<i>x</i>MnO₃ (<i>x</i> = 0.05). The reversible metal-to-insulator transition, enhanced colossal magnetoresistance (∼ 27 000% for <i>V</i>_g = 3.0 V), and giant memory effect have been observed, which can be attributed to an electronic phase separation scenario manipulated by a tiny doping-level-variation of less than 0.02 electrons per formula unit. In addition, the controllable multi-resistance states by the combined application of magnetic and electrostatic fields may serve as an indicator to probe the dynamic multiphase competition of strongly correlated oxides. These results offer crucial information to understand the physical nature of phase separation phenomena in manganite systems.

physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to dynamically control the phase - separation phenomenon in electron - doped perovskite manganite (Ca\(_{1 - x}\)Ce\(_x\)MnO\(_3\), abbreviated as CCMO) through electrostatic doping. Specifically, the researchers utilized the electric double - layer transistor (EDLT) configuration to explore how to achieve a reversible transition from the metallic state to the insulating state in the Ca\(_{0.95}\)Ce\(_{0.05}\)MnO\(_3\) (CCMO5) thin film by introducing a small amount of electrons (less than 0.02 electrons per unit formula), and the influence of this transition on the magnetoresistance and memory effect of the material.

### Main research questions:
1. **Dynamic control of phase separation**: The researchers aim to achieve dynamic conversion between different phases (such as the tilted G - type antiferromagnetic metal phase and the C - type antiferromagnetic charge/orbital - ordered insulating phase) in the electron - doped CCMO5 thin film through electrostatic doping technology.
2. **Metal - insulator transition**: Explore the mechanism of the transition of the CCMO5 thin film from the metallic state to the insulating state after introducing a small amount of electrons through electrostatic doping.
3. **Giant magnetoresistance effect**: Study the influence of electrostatic doping on the giant magnetoresistance effect of the CCMO5 thin film, especially its performance under different gate voltages.
4. **Memory effect**: Analyze the memory effect of the CCMO5 thin film under the combined action of electrostatic doping and magnetic field and its physical mechanism.

### Research background:
- **Phase - separation phenomenon**: In manganites, due to the complex interactions between charge, spin, orbital and lattice degrees of freedom, the phase - separation phenomenon is very common. This phenomenon leads to the co - existence of different insulating and metallic phases in the material, thus affecting its electronic and magnetic properties.
- **Electrostatic doping technology**: Compared with the traditional chemical doping method, electrostatic doping can control the carrier concentration more precisely and will not introduce lattice disorder, so it is an ideal tool for studying the phase - separation phenomenon.

### Experimental methods:
- **Sample preparation**: CCMO thin films with different Ce doping concentrations were prepared on NdAlO\(_3\) (NAO) substrates by pulsed - laser deposition (PLD) technology.
- **Electric double - layer transistor (EDLT)**: An EDLT device was constructed using ionic liquid as an electrolyte, and the carrier concentration in the thin film was regulated by applying different gate voltages.
- **Transport property measurement**: The resistivity of the thin film was measured under different temperature and magnetic field conditions to analyze the changes in its electronic and magnetic properties.

### Main findings:
- **Metal - insulator transition**: Through electrostatic doping, the CCMO5 thin film gradually changes from the metallic state to the insulating state, and the resistivity change exceeds three orders of magnitude.
- **Giant magnetoresistance effect**: At a 3.0 V gate voltage, the giant magnetoresistance effect of the thin film is significantly enhanced, reaching 2,427,000%.
- **Memory effect**: Under different gate voltages and magnetic field conditions, the thin film shows an obvious memory effect, that is, the magnetoresistance value depends on the history of the magnetic field.
- **Phase - separation mechanism**: A small amount of electrons introduced by electrostatic doping can induce the C - type antiferromagnetic charge/orbital - ordered insulating phase in the CCMO5 thin film, thereby achieving dynamic regulation of the phase - separation phenomenon.

These results provide important information for understanding the physical essence of the phase - separation phenomenon in the manganite system.