Abstract:The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO 2 , which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

Wall-Number Selective Growth Of Vertically Aligned Carbon Nanotubes From Fept Catalysts: A Comparative Study With Fe Catalysts

CVD Growth of Carbon Nanotube Forest with Selective Wall-Number from Fe–Cu Catalyst

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Preferential Growth of Carbon Nanotubes/Nanofibers Using Lithographically Patterned Catalysts

Direct Growth of Horizontally Aligned Carbon Nanotubes Between Electrodes and Its Application to Field-Effect Transistors

Thin-Film Metal Catalyst For The Production Of Multi-Wall And Single-Wall Carbon Nanotubes

Influence of Cerium Metal As Catalyst on the Growth and Structure of Single-Walled Carbon Nanotubes

Controlled Growth of Fe Catalyst Film for Synthesis of Vertically Aligned Carbon Nanotubes by Glancing Angle Deposition

Effects of Temperature and Catalyst Concentration on the Growth of Aligned Carbon Nanotubes

Multi-Directional Growth of Aligned Carbon Nanotubes Over Catalyst Film Prepared by Atomic Layer Deposition

Precise control of the number of walls formed during carbon nanotube growth using chemical vapor deposition

How Catalysts Affect the Growth of Single-Walled Carbon Nanotubes on Substrates

Bimetallic Catalysts for the Efficient Growth of SWNTs on Surfaces

Study on Diameter Controlled Growth of Carbon Nanotubes by Laal1_xfexo3 Catalysts

Study on Diameter Controlled Growth of Carbon Nanotubes by LaAl_(1-x)Fe_xO_3 Catalysts

Comparison between Copper and Iron as Catalyst for Chemical Vapor Deposition of Horizontally Aligned Ultralong Single-Walled Carbon Nanotubes on Silicon Substrates

High-rate Low-Temperature Growth of Vertically Aligned Carbon Nanotubes

Growth of Carbon Nanotubes on the Novel Feco-Al2o3 Catalyst Prepared by Ultrasonic Coprecipitation

Synthesis of Multi-wall Carbon Nanotubes Using Fe/CNTs As Catalyst

Influence of Microstructures of Fe Catalyst Film on Growth of Aligned Carbon Nanotubes

THE GROWTH OF ALIGNED CARBON NANOTUBES ON FeNiCo CATALYST FILMS