Abstract:The selective growth of semiconducting single-walled carbon nanotubes (s-SWCNTs) is of great importance in many high-end applications represented by nanoelectronics. Here, we developed a general approach to grow horizontally aligned s-SWCNT arrays on stable temperature (ST)-cut quartz with bimetallic catalysts using carbon monoxide (CO) as both catalyst reductant and single component carbon feedstock under atmospheric pressure. The disproportionation of CO produces not only carbon species for SWCNT growth but also CO 2 , which could act as an in-situ etchant to remove both amorphous carbon and metallic tubes. The employment of bimetallic catalyst and quartz substrate facilitates the selective etching by narrowing the diameter distribution of as-grown SWCNT arrays. At the optimized conditions, we realized the selective growth of horizontally aligned s-SWCNT arrays with the content above 97% using CoCu catalysts, confirmed by Raman characterization and electrical measurements of the fabricated field effect transistor devices. This CO-based process in selective growth of s-SWCNTs has demonstrated its feasibility and universality by the broad growth window and applicability for other bimetallic catalysts, such as FeCu and CoMn. It possesses a practical potential in obtaining semiconducting channel materials for the scalable fabrication of CNT-based devices.

CVD Growth of Carbon Nanotube Forest with Selective Wall-Number from Fe–Cu Catalyst

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Growth of High Quality, High Density Single-Walled Carbon Nanotube Forests on Copper Foils

Thin-Film Metal Catalyst For The Production Of Multi-Wall And Single-Wall Carbon Nanotubes

Wall-Number Selective Growth Of Vertically Aligned Carbon Nanotubes From Fept Catalysts: A Comparative Study With Fe Catalysts

Influence of Cerium Metal As Catalyst on the Growth and Structure of Single-Walled Carbon Nanotubes

Carbon fiber-promoted activation of catalyst for efficient growth of single-walled carbon nanotubes

Selective Synthesis Combined with Chemical Separation of Single-Walled Carbon Nanotubes for Chirality Selection

How Catalysts Affect the Growth of Single-Walled Carbon Nanotubes on Substrates

CVD catalytic growth of single-walled carbon nanotubes with a selective diameter distribution

J2240204 Evaluation of the Properties and Alignment of Carbon Nanotube Sheet Grown by CVD Method

Growth of High-Density Horizontal SWNT Arrays by Pre-Cracking of Carbon Source

Growth of Single-Walled Carbon Nanotubes from Discrete Catalytic Nanoparticles of Various Sizes

Narrow-chirality distributed single-walled carbon nanotube synthesized from oxide promoted Fe–SiC catalyst

Subnanometer Single-Walled Carbon Nanotube Growth from Fe-Containing Layered Double Hydroxides

Bimetallic Catalysts for the Efficient Growth of SWNTs on Surfaces

Precise control of the number of walls formed during carbon nanotube growth using chemical vapor deposition

Spatially Confined CVD Growth of High‐Density Semiconducting Single‐Walled Carbon Nanotube Horizontal Arrays

Carburization of Fe/Ni Catalyst for Efficient Growth of Single-Walled Carbon Nanotubes

Growth of Single-Walled Carbon Nanotubes with Controlled Structure: Floating Carbide Solid Catalysts

Comparison between Copper and Iron as Catalyst for Chemical Vapor Deposition of Horizontally Aligned Ultralong Single-Walled Carbon Nanotubes on Silicon Substrates