Abstract:Electrostatic catalysis has been an exciting development in chemical synthesis (beyond enzymes catalysis) in recent years, boosting reaction rates and selectively producing certain reaction products. Most of the studies to date have been focused on using external electric field (EEF) to rearrange the charge distribution in small molecule reactions such as Diels-Alder addition, carbene reaction, etc. However, in order for these EEFs to be effective, a field on the order of 1 V/nm (10 MV/cm) is required, and the direction of the EEF has to be aligned with the reaction axis. Such a large and oriented EEF will be challenging for large-scale implementation, or materials growth with multiple reaction axis or steps. Here, we demonstrate that the energy band at the tip of an individual single-walled carbon nanotube (SWCNT) can be spontaneously shifted in a high-permittivity growth environment, with its other end in contact with a low-work function electrode (e.g., hafnium carbide or titanium carbide). By adjusting the Fermi level at a point where there is a substantial disparity in the density of states (DOS) between semiconducting (s-) and metallic (m-) SWCNTs, we achieve effective electrostatic catalysis for s-SWCNT growth assisted by a weak EEF perturbation (200V/cm). This approach enables the production of high-purity (99.92%) s-SWCNT horizontal arrays with narrow diameter distribution (0.95+-0.04 nm), targeting the requirement of advanced SWCNT-based electronics for future computing. These findings highlight the potential of electrostatic catalysis in precise materials growth, especially for s-SWCNTs, and pave the way for the development of advanced SWCNT-based electronics.

Spatially Confined CVD Growth of High‐Density Semiconducting Single‐Walled Carbon Nanotube Horizontal Arrays

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Large-area Growth of Ultra-High-density Single-Walled Carbon Nanotube Arrays on Sapphire Surface

Growth of High-Density Horizontal SWNT Arrays Using Multi-Cycle In-Situ Loading Catalysts

Growth Of High-Density-Aligned And Semiconducting-Enriched Single-Walled Carbon Nanotubes: Decoupling The Conflict Between Density And Selectivity

Growth of close-packed semiconducting single-walled carbon nanotube arrays using oxygen-deficient TiO2 nanoparticles as catalysts

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

Diameter‐Selective Density Enhancement of Horizontally Aligned Single‐Walled Carbon Nanotube Arrays by Temperature‐Mediated Method

Confined Fe Catalysts for High‐Density SWNT Arrays Growth: a New Territory for Catalyst‐Substrate Interaction Engineering

Growth of Horizontal Semiconducting SWNT Arrays with Density Higher Than 100 Tubes/μm Using Ethanol/Methane Chemical Vapor Deposition

Growth of Single-Walled Carbon Nanotubes with Controlled Structure: Floating Carbide Solid Catalysts

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors.

Ultralow Feeding Gas Flow Guiding Growth of Large-Scale Horizontally Aligned Single-Walled Carbon Nanotube Arrays

Growth of High-Density Horizontal SWNT Arrays by Pre-Cracking of Carbon Source

Selective Growth of Subnanometer Diameter Single-Walled Carbon Nanotube Arrays in Hydrogen-Free CVD.

Preparation of isolated semiconducting single-wall carbon nanotubes by oxygen-assisted floating catalyst chemical vapor deposition

Diameter-Specific Growth Of Semiconducting Swnt Arrays Using Uniform Mo2c Solid Catalyst

Remote-contact catalysis for target-diameter semiconducting carbon nanotube array

Growth of Homogeneous High‐Density Horizontal SWNT Arrays on Sapphire Through a Magnesium‐Assisted Catalyst Anchoring Strategy