Abstract:Semiconducting single-walled nanotube (s-SWNT) arrays with specific diameters are urgently demanded in the applications in nanoelectronic devices. Herein, we reported that by using uniform Mo2C solid catalyst, aligned s-SWNT (similar to 90%) arrays with narrow-diameter distribution (similar to 85% between 1.0 and 1.3 nm) on quartz substrate can be obtained. Mo2C nanoparticles with monodisperse sizes were prepared by using molybdenum oxide-based giant clusters, (NH4)(42)[Mo132O372(H3CCOO)(30)(H2O)(72)]. 10H(3)CCOONH(4)center dot 300H(2)O(Mo-132), as the precursor that was carburized by a gas mixture of C2H5OH/H-2 during a temperature-programmed reduction. In this approach, the formation of volatile MoO3 was inhibited due to the annealing and reduction at a low temperature. As a result, uniform Mo2C nanoparticles are formed, and their narrow size-dispersion strictly determines the diameter distribution of SWNTs. During the growth process, Mo2C selectively catalyzes the scission of C-O bonds of ethanol molecules, and the resultant absorbed oxygen (O-ads) preferentially etches metallic SWNTs (m-SWNTs), leading to the high-yield of s-SWNTs. Raman spectroscopic analysis showed that most of the s-SWNTs can be identified as (14, 4), (13, 6), or (10, 9) tubes. Our findings open up the possibility of the chirality-controlled growth of aligned-SWNTs using uniform carbide nanoparticles as solid catalysts for practical nanoelectronics applications.

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Growth of High-Density Horizontal SWNT Arrays Using Multi-Cycle In-Situ Loading Catalysts

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Large-area Growth of Ultra-High-density Single-Walled Carbon Nanotube Arrays on Sapphire Surface

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Spatially Confined CVD Growth of High‐Density Semiconducting Single‐Walled Carbon Nanotube Horizontal Arrays

Growth of High-Density Horizontal SWNT Arrays by Pre-Cracking of Carbon Source

Diameter-Specific Growth Of Semiconducting Swnt Arrays Using Uniform Mo2c Solid Catalyst

High-Density Growth of Single-Wall Carbon Nanotubes on Silicon by Fabrication of Nanosized Catalyst Thin Films

Diameter‐Selective Density Enhancement of Horizontally Aligned Single‐Walled Carbon Nanotube Arrays by Temperature‐Mediated Method

Selective growth of semiconducting single-walled carbon nanotubes solely from carbon monoxide

Selective Growth of Subnanometer Diameter Single-Walled Carbon Nanotube Arrays in Hydrogen-Free CVD.

Growth of semiconducting single-walled carbon nanotubes by using ceria as catalyst supports.

Substrate-anchored Solid Solution Catalysts for High Density SWNTs Growth

How Catalysts Affect the Growth of Single-Walled Carbon Nanotubes on Substrates

Growth of Single-Walled Carbon Nanotubes with Controlled Structure: Floating Carbide Solid Catalysts

Growth of high-density horizontally aligned SWNT arrays using Trojan catalysts

Growth Of High-Density-Aligned And Semiconducting-Enriched Single-Walled Carbon Nanotubes: Decoupling The Conflict Between Density And Selectivity

Growth of close-packed semiconducting single-walled carbon nanotube arrays using oxygen-deficient TiO2 nanoparticles as catalysts

Atomic Layer Deposition of Al2O3 Catalysts for Narrow Diameter Distributed Single-Walled Carbon Nanotube Arrays Growth

Growth of Horizontal Semiconducting SWNT Arrays with Density Higher Than 100 Tubes/μm Using Ethanol/Methane Chemical Vapor Deposition