Abstract:Atmospheric-pressure (AP) plasma sources have attracted researchers in many engineering fields, due to its low cost and easy handling. The AP plasma technique has been successfully applied on the surface figuring and texturing of Si, fused silica, RS-SiC, and SiC, etc. However, these studies focus more on better control for surface figuring of the substrate. The understanding of how the Si surface roughening or smoothing is occurred during the AP plasma etching using He-based CF4 mixture gas has seldom been reported. The present study starts from a parametric study of O2 addition concentration to He-based CF4 plasma. A groove is initially etched on a single-crystal silicon wafer by the CCP-type parallel-plate plasma etcher, to study the etching rate, surface morphology, material removal characteristics, and surface roughness evolution after the plasma etched removal. It is revealed that the material removal with a typical profile is achieved without introducing further damage. At the same time, the surface finish and surface integrity were enhanced by the AP plasma. The underlying mechanism of the process was investigated. Additionally, the optimized gas composition is then applied to the larger area etching by the computer-controlled scanning with different feed rates. Based on the experimental results, the surface evolution during the plasma etching process is revealed in detail. The surface removal profile also demonstrates that this method can provide an alternative way to achieve damage-free material removal for a larger area substrate by the duplicating of the typical removal profile with different etching path.

Dry Etching Of New Phase-Change Material Al1.3sb3te In Cf4/Ar Plasma

Characteristics and Mechanism of Al1.3Sb3Te Etched by Cl2/BCl3 Inductively Coupled Plasmas

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Reactive Ion Etching of Si 2 Sb 2 Te 5 in CF 4 /ar Plasma for a Nonvolatile Phase-Change Memory Device

Dry etching of AlN films using the plasma generated by fluoride

CrSb2Te thin film as a dry resist and its etching mechanism for lithography application

The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

Reactive Ion Beam Etching of Hfo2 Film Using Ar/Chf3 Gas Chemistries

Investigation of Etching Selectivity and Microstructure of Ag-doped Sb2Te Thin Film for Dry Lithography

Electron dynamics and SiO2 etching profile evolution in capacitive Ar/CHF3 discharges driven by sawtooth-tailored voltage waveforms

Wet etching of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films and switching properties of resultant phase change memory cells

Phase Transition Kinetics of Sb(2)Te(3) Phase Change Thin Films

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

EFFECTS OF SPUTTERING TECHNICAL PARAMETERS ON THE OPTICAL PROPERTIES OF Ag-In-Sb-Te PHASE-CHANGE FILMS

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Study of Wet Etching Process Parameters of the Cr Film Resistance Bridges