Study of Wet Etching Process Parameters of the Cr Film Resistance Bridges

Yang Shengchuan,Hongchuan Jiang,Xiaojun Deng,Wanli Zhang,Yan
2012-01-01
Abstract:Chromium thin film was deposited on Al2O3 ceramic substrate by DC magnetron sputtering method.Chromium thin film resistance bridges were patterned by lithography-wet etching process.Effects of etching temperature,pH value of the etching solution and ceric ammonium nitrate [(NH4)2Ce(NO3)6] concentration on wet-etching result of Cr film resistance bridges were studied in detail based on experiments.The results show that,the optimal etching process parameters of Cr film resistance bridges are 30 ℃ for water bath temperature,4 for solution pH value and 1.16 mol/L for ceric ammonium nitrate concentration.The Cr film resistance bridge etched under the optimal conditions shows a etching rate of 180 nm/min,a side etching of 400 nm,and the edge line of the resistance bridge is orderly.It's ignition efficiency is very good under current of 5 A,while the igniting time is about 27.4 ms.
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