Abstract:Interfacial phase‐change memory (iPCM) based on layer‐structured Ge‐Sb‐Te crystals has been recently proposed, offering an energy‐efficient implementation of nonvolatile memory cells and supplementing the development of Ge‐Sb‐Te‐based phase‐change random access memories (PRAMs). Although the working principle of iPCM is still under debate, it is believed that layer‐switching plays a role in the switching process between the low‐resistance and high‐resistance states of iPCM memory cells. However, the role of Ge in forming swapped bilayers—the key elements for layer‐switching—is not yet clarified. This work manages to achieve layer‐switching in Sb 2 Te 3 thin films by manipulating the formation of bilayer defects using magnetron sputtering and post‐thermal annealing. By combining scanning transmission electron microscopy (STEM) experiments with density functional theory (DFT) calculations, the essential role of Sb‐Te intermixing is elucidated in stabilizing swapped bilayers at a low energy cost. In situ STEM experiments provide a real‐time and real‐space view of dynamical reconfiguration of van der Waals‐like gaps in Sb 2 Te 3 thin films under electron‐beam irradiation. The results show that the Ge atoms are not necessary for the formation and motion of swapped bilayers, providing atomic insights on the layer‐switching mechanism in layer‐structured binary and ternary group V‐ and IV–V‐tellurides for memory applications.

Wet etching of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films and switching properties of resultant phase change memory cells

Wet-Etching Characteristics Of Ge2sb2te5 Thin Films For Phase-Change Memory

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Reactive Ion Etching of Si 2 Sb 2 Te 5 in CF 4 /ar Plasma for a Nonvolatile Phase-Change Memory Device

Characteristics of Si-Sb-Te Films for Phase Change Memory

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Si–Sb–Te films for phase-change random access memory

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Study of Ge2sb2te5 Film for Nonvolatile Memory Medium

Layer‐Switching Mechanisms in Sb2Te3

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

Investigation on Sb-rich Sb-Se-Te phase-change material for phase change memory application

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Study of the Structural Transformation of Ge 2 Sb 2 Te 5 Induced by Current Pulse in Phase Change Memory

Multilayer Ge8Sb92/Ge2Sb2Te5 thin films: Unveiling distinct resistance states and enhanced performance for phase change random access memory

Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Layer‐Switching Mechanisms in Sb <sub>2</sub> Te <sub>3</sub>

Improved Performances of Ge2sb2te5 Based Phase Change Memory by W Doping

Ab initio molecular dynamics and materials design for embedded phase-change memory