Abstract:Herein, a GeCu2Te2 alloy is proposed as a phase-change material for application in nonvolatile phase-change random access memory (PRAM). The crystallization kinetics and microchemical changes during phase transformation are investigated, and their correlation with the electrical behaviors of the GeCu2Te2 thin films are examined. The key findings are as follows: (i) the GeCu2Te2 alloy shows a higher crystallization temperature (~185°C) than the classic Ge2Sb2Te5 (GST) thin films, thus demonstrating superior thermal stability; (ii) the crystallization kinetics demonstrate a decreasing in the Avrami exponent n from 4, which is related to the growth-dominated crystallization process evidenced by the micromorphology; (iii) a massive redistribution of the chemical elements along the depth of the thin films during crystallization is considered to be driven by selective surface oxidation at amorphous state, and stress buildup during crystallization. In addition, the crystallization-induced stress is determined as ~168 MPa by utilizing the wafer curvature and X-ray diffraction methods for the GeCu2Te2 thin films. Finally, the lower threshold switching voltage ~1.72 V for amorphous GeCu2Te2 thin films is beneficial for reducing the SET operating power consumption. The authors believe that these results are valuable for the optimal phase change material design.

Wet-Etching Characteristics Of Ge2sb2te5 Thin Films For Phase-Change Memory

Wet etching of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> films and switching properties of resultant phase change memory cells

CHF 3 /O 2 -Based Plasma Reactive Ion Etching of GeTe for Nonvolatile Phase Change Memory

Reactive Ion Etching of Si 2 Sb 2 Te 5 in CF 4 /ar Plasma for a Nonvolatile Phase-Change Memory Device

Study of Ge2sb2te5 Film for Nonvolatile Memory Medium

Characteristics of Si-Sb-Te Films for Phase Change Memory

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Characteristics of TeGa$_{2}$Sb$_{14}$ Thin Films for Phase-Change Memory

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Elemental Redistribution During the Crystallization of Ge-Cu-Te Thin Films for Phase-Change Memory

The Performance of Ge2Sb2Te5 Material and Nonvolatile Phase-Change-memory Device

Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

The characteristics of GeTe-Sb thin films with different Sb concentration for phase change memory

Improved Performances of Ge2sb2te5 Based Phase Change Memory by W Doping

Advantages of GeTeN material for phase change memory applications

Investigation of the Crystallization Kinetics of the Thin Films for the Phase Change Memory Application

Explosive Crystallization Characteristic of Ge–Cu–Te Thin Films for Phase-Change Memory

Atomic Layer Deposition of Sb2Te3/GeTe superlattice Film and Its Melt‐Quenching‐Free Phase Transition Mechanism for Phase‐Change Memory

Crystallization Kinetics of Ga–Sb–Te Films for Phase Change Memory

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Study of Si-Doped Sb2te3 Films for Phase Change Memory