STUDY ON THE PROPERTIES OF p-type μc-SiC∶H THIN FILM AND APPLICATION ON SOLAR CELLS ON FLEXIBLE SUBSTRATE

Hongkun Cai,Ke Tao,Jingfang Zhao,Jutao Hu,Dexian Zhang
DOI: https://doi.org/10.3969/j.issn.0254-0096.2012.11.001
2012-01-01
Abstract:P-type μc-SiC:H thin film was prepared using CH4 as dopant. The properties of p-type μc-SiC:H thin film was studied with changing CH4. The structure of thin film was investigated by XRD, Raman and FTIR. The dark conductivity and the crystalline volume of thin film decreased with CH4 increasing. The good properties of p-type μc-SiC:H thin film have been gained which dark conductivity was 0.15S/cm and the optical energy gap is 2.0eV. Using this p-type μc-SiC:H thin film, the efficiency of amorphous silicon thin film on PEN substrate is 5.87%.
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