New Si–H infrared absorption peak corresponding to the hydrogen-defect shallow donors in silicon

Xiang-Ti Meng,Ji-Wu Xiong,Guo-Gang Qin,Yong-Chang Du
DOI: https://doi.org/10.1088/0031-8949/52/1/019
1995-01-01
Physica Scripta
Abstract:A new Si-H infrared absorption peak at 2016 cm(-1) is found to be related to the hydrogen-defect shallow donors apart from the 2162cm(-1) peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of the complexes causing the Si-H IR peaks and hydrogen-defect shallow donors is discussed.
What problem does this paper attempt to address?