Abstract:Infrared photoionization and intracenter cross sections as well as oscillator strengths of intracenter transitions in silicon doped with single-electron, shallow donors are determined in research-grade crystals and compared with the corresponding values calculated by various theoretical models. The float-zone grown crystals were doped with substitutional group-V, interstitial group IA lithium and lithium-oxygen complex at concentrations of 1012–1017atoms/cm3 . The concentrations of electrically active impurity centers in the samples were determined from resistivity measurements. Experimentally integrated cross sections were obtained from low-temperature absorption spectra of impurities. For an isocoric substitutional donor, the oscillator strengths for intracenter transitions into the lowest odd-parity states were compared for two main crystal growth and doping methods: the float-zone and the Czochralski techniques. The applicability of the obtained calibration coefficients for various ranges of impurity concentrations is discussed. Recommendations are given for the optimal selection of optical transitions for quantifying the density of shallow donors in silicon along with experimental values for each shallow center. The oscillator strengths of transitions of shallow impurities were estimated for almost all observed donor transitions, including those into high excited, Rydberg-like atomic states, as well as for the intracenter transitions into several even-parity excited states. https://doi.org/10.1103/PhysRevMaterials.8.054601 ©2024 American Physical Society

New shallow donor centres in high-purity Czochralski-grown silicon single crystals

New Shallow Donors in High-Purity Si

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Long lifetime state of shallow donor centres for silicon based THz sources

Shallow thermal donors in silicon doped with isotopic oxygen

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon

Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Oxygen-related donors in germanium doped czochralki silicon

Defects in nitrogen-doped multicrystalline silicon

Influence of nitrogen on new donor formation in silicon crystal

Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

Intrinsic Gettering In Nitrogen Doped Czochralski Crystal Silicon

Thermal Acceptor Formation in Nitrogen-Doped Silicon

Donor Formation in Nitrogen Doped Silicon

ECenter in Silicon Has a Donor Level in the Band Gap

Investigation of Thermal Donors in Czochralski Silicon Annealed at 450°C under High Pressure of 1Gpa

Double D-centers Related Donor-Acceptor-pairs Emission in Fluorescent Silicon Carbide

Hydrogen-Defect Shallow Donors in Si