New Shallow Donors in High-Purity Si

C. H. Yu,B. Zhang,Y. J. Li,W. Lu,S. C. Shen

DOI: https://doi.org/10.1109/icimw.2006.368689

2006-01-01

Abstract:Two new hydrogenic shallow donors with binding energies of 38.32 and 40.09 meV are observed, in addition to phosphorus (P) and antimony (Sb) donors, in n-type high-purity silicon crystals by means of high-resolution photothermal ionization spectroscopy.

What problem does this paper attempt to address?

New shallow donor centres in high-purity Czochralski-grown silicon single crystals

C.H. Yu,B. Zhang,Y.J. Li,W. Lu,X.C. Shen

DOI: https://doi.org/10.1016/j.ssc.2007.01.025

IF: 1.934

2007-01-01

Solid State Communications

Abstract:Two new shallow donor centres NSD(i) and NSD(ii) with binding energies of 38.32 meV and 40.09 meV, respectively, were observed in n-type high-purity Czochralski-grown silicon single crystals by means of high-resolution photothermal ionization spectroscopy. Their spectral features and the temperature dependence of the intensity of their spectral lines imply that they are two new independent hydrogenic shallow donors. Low magnetic field investigations were performed to support our statement. The existence of the new donor centres seems to be related to the micro-defects in the sample.
Long lifetime state of shallow donor centres for silicon based THz sources

Yu Chen-Hui,Bo Zhang,Chen Chang-Qing,Yu Li-Bo,Wei Lü,Shen Xue-Chu,余晨辉,张波,陈长清,余丽波,陆卫,沈学础

DOI: https://doi.org/10.1088/0256-307X/26/2/027101

2009-01-01

Chinese Physics Letters

Abstract:Impurity centres in high purity silicon with ionization energies 38.32 and 40.09 meV are observed by photothermal ionization spectroscopy measurements. Their typical shallow donor characteristics are approved by good agreement with theoretic evaluation under varying magnetic fields. The 2p(0) state lifetime of one donor centres are more than 3 times longer than that of phosphorus in the same silicon sample. Compared to phosphorus which has been already successfully exploited to produce silicon-based THz radiations, this shallow donor centre has a pronounced enhancement on lifetime and quality factor of population inversion level. Hence, silicon with this donor centre would be a potential excellent candidate to develop improved silicon-based THz sources.
Shallow thermal donors in silicon doped with isotopic oxygen

Deren Yang,M Klevermann,L.I Murin

DOI: https://doi.org/10.1016/S0921-4526(01)00427-6

2001-01-01

Abstract:The shallow thermal donors (STDs) in silicon doped with isotopic oxygen 16O and 18O have been investigated. The sample annealed at 1275°C for 4h in a nitrogen ambient was measured by a Fourier transform infrared (FTIR) spectrometer at 10K. In comparison, a nitrogen doped Czochralski (NCZ) silicon sample in which nitrogen–oxygen complexes existed was also checked by the FTIR spectrometer. It was found that STDs were formed in the oxygen isotope doped silicon during annealing at high temperature. It is considered that nitrogen could be involved in the generation of STDs. The line positions of the STDs were almost the same as that of the N–O complexes in NCZ silicon. The small shift of some absorption lines of STDs was also observed. In addition, a new unidentified shallow center was found and discussed.
Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

I. V. Antonova,D. Yang,V. P. Popov,V. I. Obodnikov,A. Misiuk

DOI: https://doi.org/10.1016/S0167-9317(02)00943-7

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:A comparison of the thermal donor formation processes and related phenomena in the hydrogen-implanted Czochralski-grown silicon wafers one of which was doped with nitrogen during the growth was made. An average thermal donor concentration in the crystals was found to be higher in the nitrogen-doped silicon, but the difference was not very large. Suppression of the impurity gettering on radiation damages, and more effective passivation of the free carriers by hydrogen in near-surface layer was found for nitrogen-doped silicon.
Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon

S. G. Pavlov,N. V. Abrosimov

DOI: https://doi.org/10.1103/physrevmaterials.8.054601

IF: 3.98

2024-05-10

Physical Review Materials

Abstract:Infrared photoionization and intracenter cross sections as well as oscillator strengths of intracenter transitions in silicon doped with single-electron, shallow donors are determined in research-grade crystals and compared with the corresponding values calculated by various theoretical models. The float-zone grown crystals were doped with substitutional group-V, interstitial group IA lithium and lithium-oxygen complex at concentrations of 1012–1017atoms/cm3 . The concentrations of electrically active impurity centers in the samples were determined from resistivity measurements. Experimentally integrated cross sections were obtained from low-temperature absorption spectra of impurities. For an isocoric substitutional donor, the oscillator strengths for intracenter transitions into the lowest odd-parity states were compared for two main crystal growth and doping methods: the float-zone and the Czochralski techniques. The applicability of the obtained calibration coefficients for various ranges of impurity concentrations is discussed. Recommendations are given for the optimal selection of optical transitions for quantifying the density of shallow donors in silicon along with experimental values for each shallow center. The oscillator strengths of transitions of shallow impurities were estimated for almost all observed donor transitions, including those into high excited, Rydberg-like atomic states, as well as for the intracenter transitions into several even-parity excited states. https://doi.org/10.1103/PhysRevMaterials.8.054601 ©2024 American Physical Society

materials science, multidisciplinary
New Si–H infrared absorption peak corresponding to the hydrogen-defect shallow donors in silicon

Xiang-Ti Meng,Ji-Wu Xiong,Guo-Gang Qin,Yong-Chang Du

DOI: https://doi.org/10.1088/0031-8949/52/1/019

1995-01-01

Physica Scripta

Abstract:A new Si-H infrared absorption peak at 2016 cm(-1) is found to be related to the hydrogen-defect shallow donors apart from the 2162cm(-1) peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of the complexes causing the Si-H IR peaks and hydrogen-defect shallow donors is discussed.
Hydrogen-Defect Shallow Donors in Si

XT Meng,AG Kang,SR Bai

DOI: https://doi.org/10.1143/jjap.40.2123

IF: 1.5

2001-01-01

Japanese Journal of Applied Physics

Abstract:The influence of different original Si crystals and neutron fluence on the formation of hydrogen-defect shallow donors in neutron-irradiated floating-zone silicon grown in hydrogen atmosphere (FZ Si:H2) is studied. The annealing behavior of neutron-irradiated floating-zone silicon grown in argon atmosphere (FZ Si:Ar), neutron-irradiated FZ Si:H2 kept for three years at room temperature (RT) and only fast-neutron-irradiated FZ Si:H2 reveals that shallow donors are directly related to hydrogen and defects, especially to thermal-neutron-radiation point defects. The maximum concentration of the shallow donors approaches to a stable value with an increase in neutron fluence. Some characteristics of the shallow donors are discussed.
Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

CS CHEN,CF LI,HJ YE,SC SHEN,DR YANG

DOI: https://doi.org/10.1063/1.357458

IF: 2.877

1994-01-01

Journal of Applied Physics

Abstract:The behavior of nitrogen and the formation of nitrogen-oxygen donors in nitrogen-doped Czochralski-silicon crystals (Cz-Si) were studied by the electrical and infrared-absorption measurements in samples annealed in different conditions. Experiments showed that nitrogen-oxygen shallow donors are formed during the nitrogen-doped Cz-Si crystal growth. Nitrogen-oxygen thermal donors are generated in temperature range of 300–550 °C, and the behavior of these thermal donors resembles that of the thermal donors in Cz-Si crystals [P. Wagner, C. Holm, and E. Stirtl, Festkoperprobleme 24, 191 (1984)], but they are monovalent donors with the same levels as those of neutral thermal donors; no new electrically active center is generated in the temperature range of 600–900 °C.
PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER

Shi Xiao-Hong,Liu Pu-Lin,Gong Da-Wei,Chen Zhang-Hai,Shi Guo-Liang,Shen Xue-Chu

DOI: https://doi.org/10.7498/APS.46.370

IF: 0.906

1997-01-01

Acta Physica Sinica

Abstract:The 2p± and 3p± excited lines of P donors in Si0.92Ge0.08 epitaxial layer have been observed using photothermal ionization spectroscopy.The ionization energy of P in Si0.92Ge0.08 is 45.51meV according to effective mass approach.The spectral lines of P in Si1-xGex compared with those in pure Si apparently broaden due to alloy disorder effect.
Hyperfine Stark effect of shallow donors in silicon

G. Pica,G. Wolfowicz,M. Urdampilleta,M. L. W. Thewalt,H. Riemann,N. V. Abrosimov,P. Becker,H.-J. Pohl,J. J. L. Morton,R. N. Bhatt,S. A. Lyon,B. W. Lovett

DOI: https://doi.org/10.1103/PhysRevB.90.195204

2014-08-20

Abstract:We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz.

Mesoscale and Nanoscale Physics,Quantum Physics
Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Belita Koiller,R. B. Capaz,Xuedong Hu,S. Das Sarma,R.B. Capaz

DOI: https://doi.org/10.48550/arXiv.cond-mat/0402266

2004-02-10

Mesoscale and Nanoscale Physics

Abstract:Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si conduction band, obtained from {\it ab initio} calculations within the density-functional and pseudopotential frameworks. Inter-valley interference between the conduction-band-edge states of Si leads to oscillatory behavior in the charge distribution of one-electron bound states and in the exchange coupling in two-electron states. The behavior in the donor electron charge distribution is strongly influenced by interference from the plane-wave and periodic parts of the Bloch functions. For two donors, oscillations in the exchange coupling calculated within the Heitler-London (HL) approach are due to the plane-wave parts of the Bloch functions alone, which are pinned to the impurity sites. The robustness of this result is assessed by relaxing the phase pinning to the donor sites. We introduce a more general theoretical scheme, the floating-phase HL, from which the previously reported donor exchange oscillatory behavior is qualitatively and quantitatively confirmed. The floating-phase formalism provides a ``handle'' on how to theoretically anticipate the occurrence of oscillatory behavior in electronic properties associated with electron bound states in more general confining potentials, such as in quantum dots.
Study of low temperature far infrared absorption spectrum on thermal donor and shallow thermal donor in nitrogen-doped silicon

Deren Yang,Duanlin Que

1995-01-01

Abstract:The effect of nitrogen impurity in single crystal silicon on thermal donors and shallow thermal donors was investigated by means of low temperature (8K) far infrared absorption technique. It is considered that nitrogen atoms in silicon can suppress the formation of thermal donor, and the shallow thermal donors are correlated directly with the oxygen-nitrogen complexes.
Shallow-donor wave functions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Belita Koiller,R. B. Capaz,Xuedong Hu,S. Das Sarma

DOI: https://doi.org/10.1103/physrevb.70.115207

IF: 3.7

2004-09-16

Physical Review B

Abstract:Electronic and nuclear spins of shallow donors in silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to perform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of the Si conduction band, obtained from ab initio calculations within the density-functional and pseudopotential frameworks. Intervalley interference between the conduction-band-edge states of Si leads to oscillatory behavior in the charge distribution of one-electron bound states and in the exchange coupling in two-electron states. The behavior in the donor electron charge distribution is strongly influenced by interference from the plane wave and periodic parts of the Bloch functions. For two donors, oscillations in the exchange coupling calculated within the Heitler-London (HL) approach are due to the plane-wave parts of the Bloch functions alone, which are pinned to the impurity sites. The robustness of this result is assessed by relaxing the phase pinning to the donor sites. We introduce a more general theoretical scheme, the floating-phase HL, from which the previously reported donor exchange oscillatory behavior is qualitatively and quantitatively confirmed. The floating-phase formalism provides a “handle” on how to theoretically anticipate the occurrence of oscillatory behavior in electronic properties associated with electron bound states in more general confining potentials, such as in quantum dots.

physics, condensed matter, applied,materials science, multidisciplinary
Compensating Impurity in High Purity Silicon Single Crystal Investigated by Photo-Thermal Ionization Spectroscopy

Yu Chen-Hui,Zhang Bo,Yu Li-Bo,Li Ya-Jun,Lu Wei,Shen Xue-Chu

DOI: https://doi.org/10.7498/aps.57.1102

2008-01-01

Abstract:The optimum photo-thermal ionization range near liquid helium temperature for the shallow impurities in n type high purity silicon single crystal was determined experimentally. At temperature within this range, the high resolution photo-thermal ionization spectra (PTIS) of this sample were measured. Positive PTIS responses from the majority residual impurity phosphor (P) and compensating impurity boron (B) were observed by simultaneously irradiating the sample with far infrared and band-edge light. Under action of applied external magnetic fields, the positive response from compensating impurity B changes to negative response. The posibility of these phenomena being the result of temperature effect was excluded, which revealed the deficiency of Darken model and supported the model of rapid recombination of minority carriers for PTIS response of compensating impurity in elemental semiconductors.
Acceptor and donor impurity levels in hexagonal-diamond silicon

Marc Túnica,Alberto Zobelli,Michele Amato

2024-10-22

Abstract:Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype. Interestingly, despite the wide range of physical properties analyzed, to date no study has investigated impurity energy levels in 2H-Si. Here, we present results of ab initio DFT simulations to describe the effect of p- and n-type substitutional doping on the structural and electronic properties of hexagonal-diamond Si (2H-Si). We first provide a detailed analysis of how a given impurity can assume a different local symmetry depending on the host crystal phase. Then, by studying neutral and charged dopants, we carefully estimate donors and acceptors transition energy levels in 2H-Si and compare them with the cubic-diamond (3C) case. In the case of acceptors, the formation energy is always lower in 2H-Si and is associated with a shallower charge transition level with respect to 3C-Si. On the other hand, donors prefer the cubic phase and have transition energies smaller with respect to 2H-Si. Finally, by employing a simple model based on the 2H/3C band offset diagram, we prove the physical validity of our findings and we show how holes can be used to stabilize the 2H-Si phase. Overall, the described doping properties represent a robust starting point for further theoretical and experimental investigations.

Materials Science
Photo-thermal ionization spectroscopy of shallow acceptors in high purity germanium

Yu Chen-Hui,Bo Zhang,Yu Li-Bo,Li Ya-Jun,Wei Lü,Shen Xue-Chu

DOI: https://doi.org/10.7498/aps.57.1097

2008-01-01

Abstract:The results of high sensitivity photo-thermal ionization spectroscoic (PTIS) investigation of shallow acceptors in high purity p-type germanium sample with room temperature resistivity of about 50 Ω·cm, at temperature above liquid helium by Fourier transform spectrometer and associated magneto-optical measurement systems, are reported. The optimum photo-thermal ionization temperature range for the shallow impurities in high purity germanium is determined experimentally. At temperatures within this range, the PTIS spectra of this sample were measured. Boron and aluminum are found to be the main shallow acceptors in the sample. The causes of line splits of spectra, rapid recombination of compensating impurity and random strain, are analyzed and discussed.
Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Dongke Li,Junnan Han,Teng Sun,Jiaming Chen,Etienne Talbot,Remi Demoulin,Wanghua Chen,Xiaodong Pi,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1088/1674-1056/acd7cf

2023-01-01

Chinese Physics B

Abstract:Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community. In this study, atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Compared with phosphorous singly doped Si nanocrystals, it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduces the formation energy of phosphorous in Si nanocrystals. The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.
Nitrogen Effects on Thermal Donor and Shallow Thermal Donor in Silicon

Deren Yang,Duanlin Que,Kôji Sumino

DOI: https://doi.org/10.1063/1.359024

IF: 2.877

1995-01-01

Journal of Applied Physics

Abstract:Nitrogen effects on thermal donors and shallow thermal donors in nitrogen-doped silicon have been investigated by means of the far infrared technique at low temperature (8 K). It is evident that nitrogen can suppress the formation of the thermal donor in silicon annealed at 450 °C. Nitrogen atoms are combined with oxygen atoms to produce the oxygen-nitrogen complexes related with the shallow thermal donors. It is believed that nitrogen interacts with the oxygen atoms to form oxygen-nitrogen complexes so as to reduce the thermal donors.
The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H

Bin Cai,David A. Drabold

DOI: https://doi.org/10.48550/arXiv.1105.1538

2011-05-09

Abstract:In amorphous materials, acceptor and donor impurities rarely dope the system (shift the Fermi level). We find out why in a-Si:H. We report simulations on B and P doping of a-Si:H and a-Si. We analyze the Electronic Density of States (EDOS) with concentrations ranging from 1.6% to 12.5% of B or P in a-Si. The results indicate that tetrahedral B and P are effective doping configurations in a-Si, but high impurity concentrations introduce defect states. Clustered B or P also introduced mid-gap states. For a-Si:H, we report that both B(3,1) and P(3,1) (B or P atom bonded with three Si atoms and one H atom) are effective doping configurations. We investigate H passivation in both cases. There exists a "hydrogen poison range" for which H can modify the dopant configuration and suppress doping. For B doping, nearby H prefers to stay at the bond-center of Si-Si, leaves B four-fold and neutralizes the doping configuration; for P doping, nearby H spoils the doping by making tetrahedral P three-fold.

Disordered Systems and Neural Networks,Materials Science
Stark effect of shallow impurities in Si

G. D. J. Smit,S. Rogge,J. Caro,T. M. Klapwijk

DOI: https://doi.org/10.48550/arXiv.cond-mat/0310492

2003-10-21

Abstract:We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented, taking the bandstructure into account. A description as hydrogen-like impurities was used for accurate computation of energy levels and lifetimes up to large (several MV/m) electric fields. All results are discussed in connection with atomic scale electronics and solid state quantum computation.

Condensed Matter

New Shallow Donors in High-Purity Si

New shallow donor centres in high-purity Czochralski-grown silicon single crystals

Long lifetime state of shallow donor centres for silicon based THz sources

Shallow thermal donors in silicon doped with isotopic oxygen

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon

New Si–H infrared absorption peak corresponding to the hydrogen-defect shallow donors in silicon

Hydrogen-Defect Shallow Donors in Si

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER

Hyperfine Stark effect of shallow donors in silicon

Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Study of low temperature far infrared absorption spectrum on thermal donor and shallow thermal donor in nitrogen-doped silicon

Shallow-donor wave functions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Compensating Impurity in High Purity Silicon Single Crystal Investigated by Photo-Thermal Ionization Spectroscopy

Acceptor and donor impurity levels in hexagonal-diamond silicon

Photo-thermal ionization spectroscopy of shallow acceptors in high purity germanium

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Nitrogen Effects on Thermal Donor and Shallow Thermal Donor in Silicon

The electronic activity of boron and phosphorus impurities in a-Si and a-Si:H

Stark effect of shallow impurities in Si