Abstract:One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, shifted to the far-infrared due to the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multi-photon processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent the first step towards coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times key to many well-known schemes for quantum computing qubits for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Stark effect of shallow impurities in Si

Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

Silicon and Silicon-Nitrogen Impurities in Graphene: Structure, Energetics, and Effects on Electronic Transport

Impurities in 4H Silicon Carbide: Site Preference, Lattice Distortion, Solubility, and Charge Transition Levels

Stark Effect and Oscillator Strength in a Si1−xGex∕Si Quantum Disk

Acceptor and donor impurity levels in hexagonal-diamond silicon

Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Shallow-donor wave functions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Electronic structure and imaginary dielectric function for 2D GaAs doped with Si amphoteric impurities: A DFT study

Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface

Single atom impurity in a single molecular transistor

First-principles Identification of Deep Energy Levels of Sulfur Impurities in Silicon and Their Carrier Capture Cross Sections

Silicon as a model ion trap: time domain measurements of donor Rydberg states

The Nature of the Si Impurity in Ultrathin AlAs/GaAs Superlattices

Built-in electric field effect on donor impurities in strained wurtzite GaN/AlGaN asymmetric double quantum wells

Silicon Donor Array as a Disordered One-Dimensional Electron Gas

Shallow-donor impurity effects on the far infrared electron–electron optical absorption coefficient in single and core/shell spherical quantum dots with Konwent-like confinement potential

Effects of surface curvature and electric field on electronic and optical properties of an off-center hydrogenic donor impurity in 2D nanostructures

Adhesion formation after previous caesarean section—a meta‐analysis and systematic review

Charged impurity scattering and mobility in gated silicon nanowires

Monte Carlo study of electron transport in SiC