Effect of Na2S2O3 · 5H2O Concentration on the Properties of Cu2ZnSn(S, Se)4 Thin Films Fabricated by Selenization of Co-Electroplated Cu-Zn-Sn-S Precursors

Ge Jie,Jiang Jin-Chun,Hu Gu-Jin,Zhang Xiao-Long,Zuo Shao-Hua,Yang Li-Hong,Ma Jian-Hua,Cao Meng,Yang Ping-Xiong,Chu Jun-Hao
DOI: https://doi.org/10.3724/sp.j.1010.2013.00289
2013-01-01
JOURNAL OF INFRARED AND MILLIMETER WAVES
Abstract:Cu2ZnSn(S, Se)(4) films were fabricated through post-selenization of Cu-Zn-Sn-S precursors co-electroplated by varied Na2S2O3 center dot 5H(2)O concentrations. The property of obtained films before and after selenization shows a close dependence on the concentration of Na2S2O3 center dot 5H(2)O. Only the film grown by 5 mM of Na2S2O3 center dot 5H(2)O shows a uniform surface with faceted grains, a Zn-poor composition, a single phased Cu2ZnSn(S, Se)(4) structure and a 1.11 eV band gap evidencing by SEM, EDS, XRD, Raman and transmittance spectra. More than 5 mM of Na2S2O3 center dot 5H(2)O additive to the electrolyte yielded the films with rougher morphology and the presence of SnSex. Less than 5 mM of Na2S2O3 center dot 5H(2)O additive to the electrolyte resulted in the films with highly Zn-poor content and the primary formation of Cu2SnSe3.
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