Abstract:Tin sulfoselenide (SnS1-xSex) is a novel ternary semiconductor that belongs to the IV - VI group of compounds. It possesses the properties of both SnS and SnSe, which are proved as good absorber materials for solar cell fabrication. In the present work, SnS0.7Se0.3 thin films were deposited by vacuum co-evaporation technique at four different substrate temperatures (T-s), 200 degrees C, 250 degrees C, 300 degrees C and 350 degrees C. The optical properties of as-deposited SnS0.7Se0.3 films were analyzed using optical measurements. From the optical transmittance and reflectance data, the band gap energy of the layers was determined that varied in the range, 1.59-1.46 eV. The other optical parameters such as skin depth, refractive index, extinction coefficient, optical conductivity and dielectric constant of SnS0.7Se0.3 layers were determined and discussed as a function of substrate temperature. Moreover, the dispersion parameters of the layers were also evaluated using Wemple - DiDomenico (WDD) single oscillator model. The dispersion energy (E-d) and oscillator energy (E-o) of the films were evaluated and varied in the range, 2.19-2.38 eV and 7.55-9.52 eV respectively. Moreover, the optical dispersion moments (M-1 and M-3) were also calculated that were varied from 0.25 to 0.29 and from 2.76 x 10(-3) to 5.08 x 10(-3) respectively. (C) 2019 Elsevier Ltd. All rights reserved.

Effect of Cu/Sn Ratio on the Physical Properties of Cu_2SnSe_3 Thin Films

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

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Sulfurization Effect on Optical Properties of Cu2SNS3 Thin Films Grown by Two-Stage Process

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Physical Properties of Cu2SnS3 Thin Films Prepared by Sulfurization of Co-Sputtered Cu-Sn Metallic Precursors

Preparation and properties of compositionally tunable Cu3Sb(Sx,Se1-x)4 thin films

Deposition of (Ag,Cu)2Zn(Sn,Ge)S4 thin films on Mo-coated glass substrate by vacuum magnetron sputtering and post-sulfurization techniques

Structural and Optical Tunability by Reaction Time of Selenization in Cu2FeSnSe4 Thin Films

Effects of different sulfurization conditions on the characterization of CuIn(S x Se 1− x ) 2 thin films

Preparation and characterization of Cu(In,Ga)Se2 thin films derived by frequency magnetron sputtering

Effect of Selenization Temperature on the Crystalline and Electrical Properties of Cu2SnSe3 Thin Films Obtained from Rapid Thermal Process

Studies on Physical Properties of Snse2 Thin Films Grown by A Two-Stage Process

Preparation and characterization of Cu2ZnSnSe4 thin films by selenization of electrodeposited metal precursors

Preparation And Characterization Of Cu(In,Ga)Se-2 Thin Films By Selenization Of Cu0.8ga0.2 And In2se3 Precursor Films

Fabrication and Photoelectric Properties of Cu2FeSnS4(CFTS) and Cu2FeSn(S,Se)4(CFTSSe) Thin Films

Fabrication of highly crystallized Cu 2 SnS 3 thin films through sulfurization of Sn-rich metallic precursors

Effect of film thickness on structural and optical properties of ZnS:Cu films prepared by vulcanization

Effects of Annealing on Structural and Electrical Properties of CuInSe 2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes

Optical and dispersion parameters of co-evaporated SnS<sub>0.7</sub>Se<sub>0.3</sub> thin films

Effects of Selenization on Phase Transition and S/(S+Se) Ratios of As-Deposited Cu2ZnSnS4 Absorbers Sputtered by a Quaternary Target