Abstract:Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H2-diluted SiH4 as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180°C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300°C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.

Aluminum-induced Crystallization During Deposition of Silicon Films by Inductively Coupled Plasma CVD

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Structures of Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition at Room Temperature

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

Aluminum-Induced Crystallization Of Pecvd Amorphous Silicon At 120 Degrees C

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Impact of Alumina Coatings on Aluminum-Induced Crystallization of Polycrystalline Silicon Films

Aluminum-Induced Crystallization of PECVD Amorphous Silicon at 120°C

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Preparation of High Quality Polycrystalline Silicon Thin Films by Aluminum-Induced Crystallization

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Structural properties of a-Si films and their effect on aluminum induced crystallization

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Preparation of Polycrystalline Silicon of 100μm Size Large Grain Thin Films by Metal Induced Crystallization

Study on Silicon Films Prepared by Inductively Coupled Plasma CVD

Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

Optimization of Material Structure of Ploy-Si Thin Film Based on Al Induced Crystallization

Nucleation And Growth Of Al-Induced Microcrystalline Silicon In Correlation With The Microstructures Of Pecvd Amorphous Silicon

Crystallization Control of the Incubation Layer in Microcrystalline Silicon Films Deposited by Using Jet-Icpcvd