Abstract:Microcrystalline silicon film has attracted significant attention in solar cells for its wavelength response and stability,plasma enhanced chemical vapor deposition(PECVD) allows the production of a wide range of silicon thin films with varying degrees of disorder.In this paper,microcrystalline silicon films were fabricated by using a 27.12MHz PECVD system.The influence behavior of deposition parameters was systematically investigated by using Raman spectroscopy,X-ray diffraction,scanning electron microscopy,atomic force microscopy,and Fourier transform infrared spectroscopy.The epitaxial growth mechanism is discussed,the formation and evolvement of the incubation layer is analyzed,including the crystalline fraction and column grain growth.The Raman and SEM observations display the different features between the bottom and top surfaces of a silicon film.In the initial nucleus-formation process,the incubation layer embedded with clusters and nanocrystals is first formed having a thickness of several tens nanometers,then the amorphous fraction gradually reduces and a microcrystalline phase forms during the following process.The protocrystalline grains are self-assembled into a large size,the column grains with the diameter of about one hundred nanometers are formed along the growth direction.FTIR data reveal the absorption band at 2100cm-1 arises from the SiH-bonds located at grain boundaries or cluster's surfaces.In addition,the optimized plasma energy is benefit to restrain oxygen effect during growth process.It is important for a high quality film to systematically and comprehensively adjust the growth parameters including temperature,pressure,RF power,and SiH4/H2 ratio,even the radio frequency.The present investigation is helpful to understand the microstructure features and epitaxial growth mechanism of microcrystalline silicon films,and useful to improve their quality and properties for the applications in solar cells.

Nucleation And Growth Of Al-Induced Microcrystalline Silicon In Correlation With The Microstructures Of Pecvd Amorphous Silicon

Aluminum-Induced Crystallization Of Pecvd Amorphous Silicon At 120 Degrees C

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Formation Mechanism of Incubation Layers in the Initial Stage of Microcrystalline Silicon Growth by PECVD

Aluminum-Induced Crystallization of PECVD Amorphous Silicon at 120°C

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Substrate-thickness dependence of hydrogenated microcrystalline silicon nucleation rate on amorphous silicon layer

Influence of Ultrathin Amorphous Silicon Layers on the Nucleation of Microcrystalline Silicon Films under Hydrogen Plasma Treatment

Study on Al-induced Crystallization of Al/a-Si:H Bilayer Thin Film

Raman Characterization of the Structural Evolution in Amorphous and Partially Nanocrystalline Hydrogenated Silicon Thin Films Prepared by PECVD

Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Further Study of the Incubation Layer in Hydrogenated Microcrystalline Silicon Film Growth

Characteristics of microcrystalline silicon films grown by plasma enhanced chemical vapor deposition

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Enhancement of the Silicon Nanocrystals’ Electronic Structure within a Silicon Carbide Matrix

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Nanocrystallization of a-Si:H thin films deposited by PECVD under low argon dilution

Study of microstructure and defects in hydrogenated microcrystalline silicon films