Abstract:Microcrystalline silicon film has attracted significant attention in solar cells for its wavelength response and stability,plasma enhanced chemical vapor deposition(PECVD) allows the production of a wide range of silicon thin films with varying degrees of disorder.In this paper,microcrystalline silicon films were fabricated by using a 27.12MHz PECVD system.The influence behavior of deposition parameters was systematically investigated by using Raman spectroscopy,X-ray diffraction,scanning electron microscopy,atomic force microscopy,and Fourier transform infrared spectroscopy.The epitaxial growth mechanism is discussed,the formation and evolvement of the incubation layer is analyzed,including the crystalline fraction and column grain growth.The Raman and SEM observations display the different features between the bottom and top surfaces of a silicon film.In the initial nucleus-formation process,the incubation layer embedded with clusters and nanocrystals is first formed having a thickness of several tens nanometers,then the amorphous fraction gradually reduces and a microcrystalline phase forms during the following process.The protocrystalline grains are self-assembled into a large size,the column grains with the diameter of about one hundred nanometers are formed along the growth direction.FTIR data reveal the absorption band at 2100cm-1 arises from the SiH-bonds located at grain boundaries or cluster's surfaces.In addition,the optimized plasma energy is benefit to restrain oxygen effect during growth process.It is important for a high quality film to systematically and comprehensively adjust the growth parameters including temperature,pressure,RF power,and SiH4/H2 ratio,even the radio frequency.The present investigation is helpful to understand the microstructure features and epitaxial growth mechanism of microcrystalline silicon films,and useful to improve their quality and properties for the applications in solar cells.

Further Study of the Incubation Layer in Hydrogenated Microcrystalline Silicon Film Growth

Formation Mechanism of Incubation Layers in the Initial Stage of Microcrystalline Silicon Growth by PECVD

Study of Incubation Layers in Microcrystalline Silicon Solar Cells

Influence of Ultrathin Amorphous Silicon Layers on the Nucleation of Microcrystalline Silicon Films under Hydrogen Plasma Treatment

Crystallization Control of the Incubation Layer in Microcrystalline Silicon Films Deposited by Using Jet-Icpcvd

Substrate-thickness dependence of hydrogenated microcrystalline silicon nucleation rate on amorphous silicon layer

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

Study of microstructure and defects in hydrogenated microcrystalline silicon films

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

Effect of Silane/hydrogen Ratio on Microcrystalline Silicon Thin Films by Remote Inductively Coupled Plasma

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Nucleation And Growth Of Al-Induced Microcrystalline Silicon In Correlation With The Microstructures Of Pecvd Amorphous Silicon

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Effect of Silane Concentration on Intrinsic Microcrystalline Silicon

Characteristics of microcrystalline silicon films grown by plasma enhanced chemical vapor deposition

High-Rate Deposition of Microcrystalline Silicon Thin Film by Multi-Step Method

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Study of XRD on Microcrystalline Silicon Thin Films Prepared by RF-PECVD