Abstract:When heated by high-energy electron beam (EB), SiC can decompose into C and Si vapor. Subsequently, Si vapor reacts with metal oxide thin film on substrate surface and formats dense SiO2 thin film at high substrate temperature. By means of the two reactions, SiC/SiO2 composite thin film was prepared on the pre-oxidized 316 stainless steel (SS) substrate by electron beam-physical vapor deposition (EB-PVD) only using β-SiC target at 1000°C. The thin film was examined by energy dispersive spectroscopy (EDS), grazing incidence X-ray asymmetry diffraction (GIAXD), scanning electron microscopy (SEM), atomic force microscopy (AFM), backscattered electron image (BSE), electron probe microanalysis (EPMA), X-ray photoelectron spectroscopy (XPS) and Fourier transformed infra-red (FT-IR) spectroscopy. The analysis results show that the thin film is mainly composed of imperfect nano-crystalline phases of 3C-SiC and SiO2, especially, SiO2 phase is nearly amorphous. Moreover, the smooth and dense thin film surface consists of nano-sized particles, and the interface between SiC/SiO2 composite thin film and SS substrate is perfect. At last, the emissivity of SS substrate is improved by the SiC/SiO2 composite thin film.

Characterization of a stoichiometric SiC film deposited on a thermally oxidized Si substrate

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Electron beam-physical vapor deposition of SiC/SiO2 high emissivity thin film

Characterization of the Evaporation Behavior of a Β-Sic Target During Electron Beam-Physical Vapor Deposition

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Controlled-Growth and Characterization of 3C-Sic and 6H-Sic Films on C-Plane Sapphire Substrates by Lpcvd

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Influence of Liquid Evaporation on the Components of SiC High Emissivity Coating

Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron Sputtering

The Growth of Si on Sic Complex Substrate by Cvd

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Studies on SiC film deposited by pulsed XeCl excimer laser sputtering method

Preparation And Characterization Of Silicon Carbide Thin Films Synthesized By Rf-Reactive Sputtering

Effect of Different Deposition Rates on the Growth of SiC on Si by SSMBE

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

GIAXD and XPS study of 3C-SiC film prepared by EB-PVD

Characterization of Silicon Carbide Grown on Rb-Sic by Chemical Vapor Deposition