Abstract:We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

Residual Donors and Compensation in Metalorganic Chemical Vapor Deposition As-Grown N-Gan

Formation Mechanism of a Degenerate Thin Layer at the Interface of a GaN/sapphire System

Non-Equilibrium Acceptor Concentration in Gan : Mg Grown by Metalorganic Chemical Vapor Deposition

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

On compensation in Si-doped AlN

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Donor and Acceptor Characteristics of Native Point Defects in GaN

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

High-mobility N−-Gan Drift Layer Grown on Si Substrates

Compensation Phenomena In Gaas Implanted With 1 Mev Silicon Ions

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

Spatial Variation of Electrical Properties in Lateral Epitaxially Overgrown Gan

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Self-compensation due to point defects in Mg-doped GaN

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films