Abstract:It is demonstrated that cuprous oxide (Cu2O) can be electrodeposited epitaxially onto silicon (Si) and indium phosphide (InP) (001) single‐crystalline substrates from aqueous solution. Epitaxial electrodeposition under these conditions is remarkable considering the strong driving force for the formation of amorphous native oxide layers on Si and InP substrates. To elucidate the growth mechanisms, the microstructure of the interfaces between the Cu2O layer and the two different substrates was investigated by TEM (transmission electron microscopy) in conjunction with XEDS (X‐ray energy‐dispersive spectroscopy) and EELS (electron energy‐loss spectroscopy). In both heteroepitaxial systems, the Cu2O layers have a unique but non‐trivial crystallographic orientation relationship (OR) with the substrate, which can be described as a 45° rotation around the common [001] axis representing the substrate normal. We show that this relationship minimizes the overall misfit between corresponding interatomic spacings of the two adjacent crystals. In apparent contradiction to the unique OR, TEM revealed that in both hetero‐systems the Cu2O layer is separated from the substrate by an amorphous interlayer. The thickness of the interlayer typically is a few nanometers. The presence of an amorphous interlayer contrasts with our experimental results on electrodeposited Cu2O on Au (001) single‐crystal substrates, also included in this article, where TEM shows the Cu2O epilayer in direct contact with the substrate. XEDS and EELS analysis of the chemical composition and bonding at Cu2O/Si and Cu2O/InP interfaces in the as‐grown state as well as after tempering revealed that the interlayer is mainly composed of SiO2 and InPO4, respectively. Most likely, the observed epitaxial layers on top of an amorphous interlayer evolve by nucleation of epitaxial Cu2O directly on the substrate. While simultaneous oxidation of the substrate leads to the formation of an amorphous layer, the epitaxial nuclei can laterally overgrow the oxide. Consequently, the local composition of the amorphous layer varies with the nature of the substrate.

Chemical Vapor Deposition Mechanism of Copper Films on Silicon Substrates

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Study on Chemical Vapor Deposited Copper Films on Cyano and Carboxylic Self-Assembled Monolayer Diffusion Barriers

Epitaxil Electrodeposition Of A Crystalline Metal Oxide Onto Single-Crystalline Silicon

Epitaxial Electrodeposition of a Crystalline Metal Oxide onto Single-Crystalline Silicon

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Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

In situ functionalized self-assembled monolayer surfaces for selective chemical vapor deposition of copper

Effects of Terminated Functional Groups of Self-assembled Monolayers on Chemical Vapor-deposited Copper Films

Preparation and Characterization of Copper Oxide Thin Films Deposited by Filtered Cathodic Vacuum Arc

EPITAXIAL GROWTH OF CUPROUS OXIDE ELECTRODEPOSITED ONTO SEMICONDUCTOR AND METAL SUBSTRATES

First Principles Study of Silicane Decomposition on Copper Surface

Fluidized Bed Chemical Vapor Deposition of Copper on Micronic Alumina Powders

Chemical Bonding of Magnetron-Sputtered Copper on Pecvd Amorphous Sicof Film

Formation Mechanism and Ordered Patterns in Cu Films Deposited on Silicone Oil Surfaces

Elective Deposition of Diamond Films on Si (100) Substrates

Comprehensive characterization of copper oxide atomic layer deposition using water or ozone with enhanced bis-(dimethylamino-2-propoxide) copper delivery

Interconnect Fabrication by Superconformal Iodine-Catalyzed Chemical Vapor Deposition of Copper