Abstract:Sputtered Cu/Si thin films were experimentally prepared at different sputtering pressures and characterized using X-ray diffraction (XRD) and an atomic force microscope (AFM). Simultaneously, an application-oriented simulation approach for magnetron sputtering deposition was proposed in this work. In this integrated multiscale simulation, the sputtered atom transport was modeled using the Monte Carlo (MC) and molecular dynamics (MD) coupling method, and the deposition of sputtered atoms was simulated using the MD method. This application-oriented simulation approach was used to simulate the growth of Cu/Si(100) thin films at different sputtering pressures. The experimental results unveiled that, as the sputtering pressure decreased from 2 to 0.15 Pa, the surface roughness of Cu thin films gradually decreased; (111)-oriented grains were dominant in Cu thin films and the crystal quality of the Cu thin film was gradually improved. The simulation results were consistent with the experimental characterization results. The simulation results revealed that the transformation of the film growth mode from the Volmer-Weber growth mode to the two-dimensional layered growth mode resulted in a decrease in the surface roughness of Cu thin films; the increase in the amorphous compound CuSix and the hcp copper silicide with the decrease in the sputtering pressure was responsible for the improvement of the crystal quality of the Cu thin film. This work proposed a more realistic, integrated simulation scheme for magnetron sputtering deposition, providing theoretical guidance for the efficient preparation of high-quality sputtered films.

Chemical Bonding of Magnetron-Sputtered Copper on Pecvd Amorphous Sicof Film

Copper Metallization of Low-Dielectric-constant A-Sicof Films for ULSI Interconnects

Properties of amorphous SiO2 films prepared by reactive RF magnetron sputtering method

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Chemical Vapor Deposition Mechanism of Copper Films on Silicon Substrates

Enhancing the bond strength of magnetron-sputtered copper layers on polyimide and polyether ether ketone surfaces through surface modification

Enhanced Cvd of Copper Films on Self-Assembled Monolayers As Ultrathin Diffusion Barriers

On the Microcrystal Structure of Sputtered Cu Films Deposited on Si(100) Surfaces: Experiment and Integrated Multiscale Simulation

Morphology and microstructure control of sputter-deposited copper films by addition of Cr

Microstructure evolution and anti-wear mechanism of Cu film fabricated by magnetron sputtering deposition

Atomic Diffusion in the Interface of Fe/Si Prepared by Magnetron Sputtering

Effects of anode geometry on DC magnetron sputtering of Copper Oxide films Deposition

Influence of Sputtering Process on the Deposition and Optical Properties of Sicn Films

Photo-Catalytic Activity of Cu2O Films with Various Crystal Structures Prepared by DC Reactive Magnetron Sputtering

Interfacial Bonding Mechanisms of Sintered Cu Nanoparticles on Different Metallization Surfaces

XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Modification of Cu Nanoparticles with A Disulfide for Polyimide Metallization

Thermal Process of Iron Silicides Prepared by Magnetron Sputtering

Electrical and optical properties of copper oxide thin films prepared by DC magnetron sputtering

Sintering Mechanism of a Supersaturated Ag-Cu Nanoalloy Film for Power Electronic Packaging