Abstract:Printing of electrical circuits and interconnects using isotropic conductive adhesives (ICAs) is of great interest due to their low-temperature processing and compatibility with substrates for applications in sensors, healthcare, and flexible devices. As a lower cost alternative to silver (Ag), copper (Cu)-filled ICAs are desirable but limited by the formation of high-resistivity Cu surface oxides. To overcome this limitation, self-assembled monolayers (SAMs) of octadecanethiol (ODT) have been demonstrated to reduce the oxidation of micrometer-scale Cu powder particles for use in ICAs. However, the deposition and function of the SAM require further investigation, as described in this paper. As part of this work, the stages of the SAM deposition process, which included etching with hydrochloric acid to remove pre-existing oxides, were studied using X-ray photoelectron spectroscopy (XPS), which showed low levels of subsequent Cu oxidation when ODT coated. The treated Cu powders were combined with one- or two-part epoxy resins to make Cu-ICAs, and the effect of the Cu surface condition and weight loading on electrical conductivity was examined. When thermally cured in an inert argon atmosphere, ICAs filled with Cu protected by ODT achieved electrical conductivity up to 20 × 105 S·m-1, comparable to Ag-ICAs, and were used to make a functional circuit. To understand the function of the SAM in these Cu-ICAs, scanning and transmission electron microscopy were used to examine the internal micro- and nano-structures along with the elemental distribution at the interfaces within sections taken from cured samples. Sulfur (S), indicative of the ODT, was still detected at the internal polymer-metal interface after curing, and particle-to-particle contacts were also examined. XPS also identified S on the surface of cured Cu-ICAs even after thermal treatment. Based on the observations, electrical contact and conduction mechanisms for these Cu-filled ICAs are proposed and discussed.

Copper Metallization of Low-Dielectric-constant A-Sicof Films for ULSI Interconnects

Chemical Bonding of Magnetron-Sputtered Copper on Pecvd Amorphous Sicof Film

Electroless Plating of Copper via a Sn-Free Process on Dielectric SiLK Surface Modified by UV-Induced Graft Copolymerization with 4-Vinylpyridine and 1-Vinylimidazole

Synthesis and characterization of SiCOF/a-C:F double-layer films with low dielectric constant for copper interconnects

Property Improvement of Copper Films with Zirconium Additive for ULSI Interconnects

Synthesis and Characterization of SiCOF/ a2C∶F Double2Layer Films with Low Dielectric Constant for Copper Interconnects

Ultrathin Cusin/P-Sic:H Bilayer Capping Barrier for Cu/Ultralow-K Dielectric Integration

Feasibility Study on the Use of Cu(Co) Alloy for Barrierless Copper Metallization

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Evaluation of Cu(V) Self-Forming Barrier for Cu Metallization

Highly Conductive Cu-Cu Joint Formation by Low-Temperature Sintering of Formic Acid-Treated Cu Nanoparticles

Microstructure and Thermal Stability of Cusin Self-Aligned Layer in Advanced Copper Interconnect Multilayer Films

Effects of Cr Dopant on the Microstructure and Electromigration Performance of Cu Interconnects

Thermal Performance of Sputtered Cu Films Containing Insoluble Zr and Cr for Advanced Barrierless Cu Metallization

Evaluation of the Crystallographic Quality of Electroplated Copper Thin-Film Interconnection Embedded in a Si Substrate

Modification of Cu Nanoparticles with A Disulfide for Polyimide Metallization

The formation of heterointerface defects in Au/Cu films on Si substrates under direct current in a vacuum ultraviolet environment.

Low-dielectric-constant Α-Sicof Film for ULSI Interconnection Prepared by PECVD with TEOS/C4F8/O2

Ultrasonic Bondability and Antioxidation Property of Ti/Cu/Ag Metallization on Si Substrate

Influence Of Cu2o On Interface Behavior Of Copper/Sicp Composite Prepared By Spark Plasma Sintering

The Role of Self-Assembled Monolayers in the Surface Modification and Interfacial Contact of Copper Fillers in Electrically Conductive Adhesives