Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Xin Liu,Qi Wang,Song Wu
DOI: https://doi.org/10.1002/cvde.200606488
2006-01-01
Chemical Vapor Deposition
Abstract:Copper thin films are produced by CVD using the precursor Cu-II bis-hexafluoroacetylacetonate [Cu-II(hfac)(2)], on the self-assembled monolayers of a 3-mercaptopropyltrimethoxysilane (MPTMS) modified substrate. The microstructures of the deposited copper films are characterized by various surface analysis techniques, such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The film resistivity was also measured using the four-probe method. The results of the measurements indicate that the microstructures of copper thin film are strongly dependent on the substrate temperature during film deposition. The copper thin films deposited have a resistivity as low as 2.1 mu Omega cm in the temperature range 290-350 degrees C. These results indicate that the CVD of copper film on a mercaptan SAM diffusion barrier is a potential technique for copper multilevel metallization.
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