Thin Copper Films Prepared by Chemical Vapor Deposition on Glass-Ceramic Substrates

刘杨秋,梁彤祥,符晓铭,倪晓军
DOI: https://doi.org/10.3321/j.issn:1000-0054.2003.06.026
2003-01-01
Abstract:Low dielectric constant glassceramic substrates and low resistivity, high electromigration resistance copper conductors have drawn attention as new substrates for high density electronic packaging. Thin copper films were deposited on glassceramic substrates using copper(Ⅱ) acetylacetonate precursor using atmospheric pressure chemical vapor deposition. TGA, XRD and SEM were used to study the effects of deposition temperatures and gas flow rates on the copper conductor sheet resistance. The results showed that with increasing deposition temperature, the copper resistance decreased until 300 ℃ and then increased. Between 290 ℃ and 310 ℃, the sheet resistivity of the copper thin film was 25 mΩ for N2 carrier gas flow rates from 200 mL/min to 350 mL/min and H2 reacting gas flow rates from 450 mL/min to 600 mL/min.
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