Abstract:In current practice, DRAM manufacturers apply redundancy repair to decommission all the weak cells that cannot satisfy the target data retention time under the worse-case operational conditions (e.g., the highest operating temperature). However, as the DRAM scaling enters sub-20nm regime, it becomes increasingly challenging to repair all the weak cells at reasonable cost. This work studies how one could use DRAM chips with unrepaired weak cells in computing systems. In particular, this work is based upon the simple idea that OS reserves all the error-prone pages, which contain at least one unrepaired weak cell, from being used. Under a relatively high error-prone page rate (e.g., 8%), this basic idea is subject to two issues: (1) Simply reserving all the error prone pages could make it almost impossible for OS to allocate a continuous fragmentation-free physical memory space for some critical operations such as OS booting and DMA buffering. (2) Since most error-prone pages may only contain few unrepaired weak cells, reserving all the error-prone pages from practical usage could cause noticeable memory resource waste. Aiming to address these issues, this paper presents a controller-based selective page re-mapping strategy to ensure a continuous critical memory region for OS, and develops a software-based memory error tolerance scheme to re-cycle all the error-prone pages for the zRAM function in Linux. Since the first scheme only eliminates the fragmentation in the critical memory region (e.g., 128MB in Linux), the remaining non-critical memory region is still subject to severe fragmentation. Hence, we carried out experiments using SPEC CPU2006 to quantitatively demonstrate that highly fragmented non-critical memory region may not cause significant computing system performance degradation. We further study the latency and hardware cost of implementing the controller-based page re-mapping, and the effectiveness of re-cycling error-prone pages for zRAM in Linux. The experimental results show that our proposed software-based error tolerance scheme degrades the speed performance of zRAM by only up to 7%.

Optimization of Repairing Embedded SRAM and its Application

An Efficient and Robust Yield Optimization Method for High-dimensional SRAM Circuits.

Efficient built-in self-repair strategy for embedded SRAM with selectable redundancy

Optimization of SRAM cell by utilizing reverse short channel and reverse narrow channel effect

An Efficient SRAM Yield Analysis and Optimization Method with Adaptive Online Surrogate Modeling

Performance Improvements by SL-Current Limiter and Novel Programming Methods on 16MB RRAM Chip

A 0.13 µm 8 Mb Logic-Based Cu Si O ReRAM With Self-Adaptive Operation for Yield Enhancement and Power Reduction

RRAM Repair Scheme Based on RRAM Cell Characteristics

Power Efficient SRAM Design with Integrated Bit Line Charge Pump

A Logic-Based Embedded Dram With Novel Cell Structure And Dynamically Adaptive Refresh For Long Data Retention, Zero Data Availability Penalty And High Yield

A Novel Test Methodology For Design Of An Embedded Synchronous Dual-Read/Write Port Sram With Configurable Capacity

Maximizing the Yield of Bucket Brigade Quantum Random Access Memory using Redundancy Repair

A 0.13 Μm 8 Mb Logic-Based Cu $_{\rm X}$si $_{\rm Y}$o ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

A 0.13µm 8Mb logic based Cu<inf>x</inf>Si<inf>y</inf>O resistive memory with self-adaptive yield enhancement and operation power reduction

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

A novel low power 64-kb SRAM using bit-lines charge-recycling and non-uniform cell scheme

On the Use of Dram with Unrepaired Weak Cells in Computing Systems

Analytic Model Of Endurance Degradation And Its Practical Applications For Operation Scheme Optimization In Metal Oxide Based Rram

Yield Driven Design and Optimization for Near Threshold Voltage Sram Cells

An Improved Data-aware Structure Sub-threshold SRAM