An Improved Data-aware Structure Sub-threshold SRAM

HUANG Hai-chao,CHEN Xin,JIN Wei,HE Wei-feng
DOI: https://doi.org/10.19304/j.cnki.issn1000-7180.2015.09.006
2015-01-01
Abstract:Conventional Data-aware structure SRAM has power waste issue in read process due to row half-select, thus this paper proposes an improved 9T SRAM.Compared with traditional SRAM,the proposed scheme solves the power problem caused by the read path of half-selected cells in the selected row.The simulation result proves that the proposed scheme can reduce power dissipation on bitline by 5 14% at most.A 1 6kb SRAM test scheme is implemented in 0.13μm technology operating at 0.42V,with with measured power consumption of 5.37μW.
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