Abstract:The design of power‐efficient SRAM cells is necessary for biomedical applications such as body area networks (BANs) to extent their battery life. SRAM cell's power consists of two main components, including leakage power and dynamic power, in which the former overcomes the latter in advanced technology. This paper presents a low‐leakage single‐bitline 9T (L2SB9T) SRAM cell. The proposed design is free from read‐disturbance issue and eliminates writing “1” problem. The results are carried out by utilizing HSPICE and 16‐nm CMOS PTM at a 0.7 V, 25°C, and under severe PVT variations. The proposed L2SB9T SRAM cell is comprehensively compared with other recently published SRAM cells including conventional 6T, write/read enhanced 8T (WRE8T), transmission‐gate 9T (TG9T), read‐disturb‐free 9T (RDF9T), fully differential 10T (Chang10T), data‐independent read port 10T (DIRP10T), and single‐bitline 11T (SB11T). It shows at least 1.26X/1.07X/1.01X improvement in read static noise margin (RSNM)/write static noise margin (WSNM)/write margin (WM). Furthermore, the leakage power is reduced by the proposed cell, at least 1.137X. Moreover, the suggested cell consumes the third/second best dynamic read/write power, which is 1.42X/1.37X lower than that of conventional 6T SRAM cell. The proposed L2SB9T SRAM cell performs its read/write operation reliably by showing at least 1.71X narrower speared in RSNM compared to the best SRAM cell and third best WM variability. For all these improvements, the proposed L2SB9T SRAM cell incurs a 4.20X/1.06X/1.808X penalty in read delay/write delay/layout area when compared with the best SRAM cells, that is, the Chang10T/6T/6T. This paper presents a low‐leakage single‐bitline 9T (L2SB9T) SRAM cell, which is free from the read‐disturbance issue and eliminates the writing “1” problem. Comparison results show at least 1.26X/1.07X/1.01X improvement in read static noise margin (RSNM)/write static noise margin (WSNM)/write margin (WM). Furthermore, the leakage power is reduced at least 1.137X.

A Single Bitline Highly Stable, Low Power With High Speed Half-Select Disturb Free 11T SRAM Cell

A FinFET based low-power write enhanced SRAM cell with improved stability

A Half-Select Disturb-Free 11T SRAM Cell with Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins

A Low-Energy, Stable, Single-Bitline Accessed FinFET 9T-SRAM

A low‐leakage single‐bitline 9T SRAM cell with read‐disturbance removal and high writability for low‐power biomedical applications

A 256kb 9T Near-Threshold SRAM With 1k Cells per Bit-Line and Enhanced Write and Read Operations

A Disturb-Free 10T SRAM Cell with High Read Stability and Write Ability for Ultra-Low Voltage Operations

Hybrid MOSFET-TFET 11T SRAM Cell with High Write Speed and Free Half-Selected Disturbance

Design analysis of a low-power, high-speed 8 T SRAM cell using dual-threshold CNTFETs

A low power static noise margin enhanced reliable 8 T SRAM cell

A 0.33 V 2.5 Μw Cross-Point Data-Aware Write Structure, Read-Half-select Disturb-Free Sub-Threshold SRAM in 130 Nm CMOS

A FinFET‐Based Low‐Power Static Random Access Memory Cell With Improved Stability

A CNTFET Based Stable, Single-Ended 7T SRAM cell With Improved Write Operation

A Highly Reliable and Low-Power Cross-Coupled 18T SRAM Cell

High Noise Margin 12T Subthreshold SRAM Cell with Enhanced Read Speed and Eliminated Half-Selected Problem

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

Design of dual port 9T SRAM cell with parallel processing and high performance computing

Low Voltage SRAM Cell Suitable for Bit-Interleaved Structure

Radiation-Hardened 14T SRAM Bitcell with Speed and Power Optimized for Space Application

A 0.2 V-1.8 V 8T SRAM with Bit-interleaving Capability.