Abstract:The probability of timing failure in SRAM accessing becomes unacceptably high at low voltages, which makes the SRAM become the bottleneck of the system performance. Recently proposed timing speculation SRAM (SSRAM) can access bit cells much earlier than the conservative time margin and detect the potential timing failures. Unfortunately, the performance benefit brought by this speculative scheme might be nullified by the extra cycles used to correct the errors. Therefore, in a cache architecture, cachelines containing bit cells with timing failure bring significant performance degradation in a low-voltage scenario. In this paper, we propose the set-associative L1 and L2 Remapping and Reuse-aware timing Speculation caches (RRS caches) based on the cross-sensing SSRAM to reduce the weak cacheline access penalties under low supply voltages. RRS caches improve the proportion of the error-free cachelines (or strong cachelines) by clustering as more as possible bit cells with timing failures into weak cachelines. In addition, RRS caches swap the frequently reused data to the error-free cachelines to further reduce the average access latency and the energy consumption by an optimized filling/replacement policy. We compared the performance, energy consumption and area overhead of RRS caches with those of state-of-the-art approaches. According to our simulation results, RRS caches improve the system performance close to that of the Perfect caches in a four-core processor with only 0.12% extra energy consumption, 4.12% extra area overhead in the L1 cache and 2.69% extra energy consumption, 5.66% extra area overhead in the L2 cache compared to the cache designs with the raw SSRAM.

CDS-RSRAM: a Reconfigurable SRAM Architecture to Reduce Read Power with Column Data Segmentation

Reducing SRAM Reading Power with Column Data Segment and Weights Correlation Enhancement for CNN Processing.

A 0.33 V 2.5 Μw Cross-Point Data-Aware Write Structure, Read-Half-select Disturb-Free Sub-Threshold SRAM in 130 Nm CMOS

An Improved Data-aware Structure Sub-threshold SRAM

Column-Selection-Enabled 10T SRAM Utilizing Shared Diff-VDD Write and Dropped-VDD Read for Power Reduction

Design and Implement of Low Power Consumption SRAM Based on Single Port Sense Amplifier in 65 Nm

A Highly Reliable and Low-Power Cross-Coupled 18T SRAM Cell

A low-Power SRAM with charge cycling based read and write assist scheme

A 10T SRAM with Two Read and Write Modes Across Row and Column for CAM Operation and Computing In-Memory

Power Efficient SRAM Design with Integrated Bit Line Charge Pump

Resonant Energy Recycling SRAM Architecture

S2RAM: Optimization of SRAM With Memory Access Patterns

Energy-Efficient SRAM Design with Data-Aware Dual-Modes L0T Storage Cell for CNN Processors

A New SRAM Cell Design for Nano-Scale Technology

A Design of Subthreshold SRAM Cell Based on RSCE and RNCE.

An Ultra-Low-Voltage Bit-Interleaved Synthesizable 13T SRAM Circuit.

A Resource-Saving TCAM Structure Based on SRAM

A novel low power 64-kb SRAM using bit-lines charge-recycling and non-uniform cell scheme

Optimization of Embedded SRAM for Low Power and Testing

A Low Power SRAM Architecture for Error-Tolerant Applications

Lowering the Hit Latencies of Low Voltage Caches Based on the Cross-Sensing Timing Speculation SRAM.