Abstract:Including redundancy is popular and widely used in a fault-tolerant method for memories. Effective fault-tolerant methods are a demand of today's large-size memories. Recently, system-on-chips (SOCs) have been developed in nanotechnology, with most of the chip area occupied by memories. Generally, memories in SOCs contain various sizes with poor accessibility. Thus, it is not easy to repair these memories with the conventional external equipment test method. For this reason, memory designers commonly use the redundancy method for replacing rows-columns with spare ones mainly to improve the yield of the memories. In this manuscript, the Deep Q-learning (DQL) with Bit-Swapping-based linear feedback shift register (BSLFSR) for Fault Detection (DQL-BSLFSR-FD) is proposed for Static Random Access Memory (SRAM). The proposed Deep Q-learning-based memory built-in self-test (MBIST) is used to check the memory array unit for faults. The faults are inserted into the memory using the Deep Q-learning fault injection process. The test patterns and faults injection are controlled during testing using different test cases. Subsequently, fault memory is repaired after inserting faults in the memory cell using the Bit-Swapping-based linear feedback shift register (BSLFSR) based Built-In Self-Repair (BISR) model. The BSLFSR model performs redundancy analysis that detects faulty cells, utilizing spare rows and columns instead of defective cells. The design and implementation of the proposed BIST and Built-In Self-Repair methods are developed on FPGA, and Verilog's simulation is conducted. Therefore, the proposed DQL-BSLFSR-FD model simulation has attained 23.5%, 29.5% lower maximum operating frequency (minimum clock period), and 34.9%, 26.7% lower total power consumption than the existing approaches.

Efficient built-in self-repair strategy for embedded SRAM with selectable redundancy

A built-in self-repair design for RAMs with 2-D redundancy

A BISR Scheme for 3D Stacked Memory by Sharing Adjacent Redundancy Cells Across Dies

Deep Q-Learning with Bit-Swapping-Based Linear Feedback Shift Register fostered Built-In Self-Test and Built-In Self-Repair for SRAM

An on-line BIST RAM architecture with self-repair capabilities

An In-Array Build-In Self-Test Scheme for Embedded SRAM Array

Design and Test of the In-Array Build-In Self-Test Scheme for the Embedded RRAM Array

Bit-Interleaving-Enabled 8t Sram with Shared Data-Aware Write and Reference-Based Sense Amplifier

Computation-oriented Fault-Tolerance Schemes for RRAM Computing Systems

A Hybrid Technique Based on ECC and Hardened Cells for Tolerating Random Multiple-Bit Upsets in SRAM Arrays

A new built-in self-repair approach to VLSI memory yield enhancement by using neural-type circuits

Addressing multiple bit/symbol errors in DRAM subsystem

RRAM Repair Scheme Based on RRAM Cell Characteristics

A Novel Test Methodology For Design Of An Embedded Synchronous Dual-Read/Write Port Sram With Configurable Capacity

Maximizing the Yield of Bucket Brigade Quantum Random Access Memory using Redundancy Repair

Enhanced Error Correction Against Multiple-Bit-Upset Based on Bch Code for Sram

A 2mb Reram with Two Bits Error Correction Codes Circuit for High Reliability Application

A low-Power SRAM with charge cycling based read and write assist scheme

Hardware Fault Tolerance for Binary RRAM Crossbars

Self-rectifying bistable resistor for advanced memory application

Design of Highly Reliable 14T and 16T SRAM Cells Combined with Layout Harden Technique