Study on Performance of Si-based SiO_2 Optical Films with IBAD Electron Beam Evaporation

CHEN Jingxiang,CUI Bifeng,DING Ying,JI Wei,WANG Xiaoling,ZHANG Song,LING Xiaohan,LI Jiachun,MA Yuhui,SU Daojun
2013-01-01
Abstract:Studied are the optical characteristics of SiO2 film based on Si(100)fabricated by electron beam evaporation with IBAD(ion beam assisted deposition) and without IBAD under different process conditions.It is found that,for surface morphology,refractive index uniformity and moisture stability,the films fabricated by electron beam evaporation with IBAD are better than the films processed without IBA,and in the temperature range of 40~160 ℃,the refractive index of SiO2 optical films is improved with substrate temperature increasing.When the pressure is 1.5×10-3 Pa,the deposition rate is 5 nm/s,the drive voltage of ion source is 285.4 V and the ratio of ion source PAr∶PO2=1∶1,SiO2 optical films obtain best optical characteristics.
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