Abstract:Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to μm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 μm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycling. We find that increasing the deposition rate from 0.3 to 23 nm/s at a substrate temperature of 1000 °C reduces the roughness, void fraction, and residual stress of epitaxial Si-on-Si layers. For Si-on-SiO2, all films are polycrystalline under the same deposition conditions as for Si-on-Si, with a reduction in void fraction and increase in roughness at higher deposition rates. The residual stress for Si-on-SiO2 is comparable across all deposition rates >1 nm/s. Furthermore, we measure lower resistivities in the films than in the feedstock for Si-on-Si and higher than the feedstock for Si-on-SiO2. While the films become microstructurally denser and less defective at higher deposition rates, the resistivity increases for each next deposition step in the case of multi-step depositions from the same feedstock. Time-of-flight scanning secondary mass spectroscopy measurements show that the films have a significantly higher B-concentration than the feedstock, suggesting B-gettering to the melted region and transferring to the Si film upon the e-beam deposition process. This work demonstrates how electron beam evaporation can be used to recollect and recycle waste Si pieces, bringing important insights into how the deposition parameters influence the quality of the deposited polycrystalline as well as epitaxial thin-to-thick films.

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Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

Characteristics of Nb2 O5 Thin Films Deposited by Ion Beam Sputtering

Study on the optical thin film deposited by plasma ion plating

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Investigation on Thick Silicon Dioxide Films Evaporation by Electron Beam Evaporation

Ion beam assisted deposition of Al2O3 optical waveguides on silicon

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Study of SiO2 Films Prepared by Electron Cyclotron Resonant Microwave Plasma

Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Effect of ionic oxygen concentration on properties of SiO2 and Ta2O5 monolayers deposited by ion beam sputtering

Growth of SiO2 films by ECR-PECVD for planar optical waveguide and its properties

Effect of substrate temperature and annealing on the structure and opto-electrical properties of silicon carbide thin films prepared by e-beam evaporation

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

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Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Microstructures and properties of Er-doped Al2O3 thin films synthesized by ion beam assisted deposition