Abstract:Growing high-quality Si films at high rates with thicknesses ranging from the few nm- to μm-range while keeping the material consumption at a minimum is important for a wide range of Si-based technologies, spanning from batteries to sensors and solar cells. In this work, we elucidate the effects of electron beam deposition (e-beam) conditions on the growth of ~4 μm thick Si layers on bare and thermally oxidized (001)-oriented Si substrates. All depositions are performed from a stabilized and refillable melt of broken B-doped wafers and recollected using Si-shields during deposition for recycling. We find that increasing the deposition rate from 0.3 to 23 nm/s at a substrate temperature of 1000 °C reduces the roughness, void fraction, and residual stress of epitaxial Si-on-Si layers. For Si-on-SiO2, all films are polycrystalline under the same deposition conditions as for Si-on-Si, with a reduction in void fraction and increase in roughness at higher deposition rates. The residual stress for Si-on-SiO2 is comparable across all deposition rates >1 nm/s. Furthermore, we measure lower resistivities in the films than in the feedstock for Si-on-Si and higher than the feedstock for Si-on-SiO2. While the films become microstructurally denser and less defective at higher deposition rates, the resistivity increases for each next deposition step in the case of multi-step depositions from the same feedstock. Time-of-flight scanning secondary mass spectroscopy measurements show that the films have a significantly higher B-concentration than the feedstock, suggesting B-gettering to the melted region and transferring to the Si film upon the e-beam deposition process. This work demonstrates how electron beam evaporation can be used to recollect and recycle waste Si pieces, bringing important insights into how the deposition parameters influence the quality of the deposited polycrystalline as well as epitaxial thin-to-thick films.

On the effects of processing variables on the composition and microstructure of ion beam enhanced deposition (IBED) Si3N4 film

Optical and Mechanical Properties and Microstructures of Nb2O5, Ta2O5 and SiO2 Thin Films Prepared by Ion Beam Sputtering

Characteristics of Nb2 O5 Thin Films Deposited by Ion Beam Sputtering

Effect of the deposition conditions on the morphology and bonding structure of SiCN films

Influences of different sputtering current on the microstructure and electrical properties of silicon nitride thin films deposited on cemented carbide tools

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

Effects of C/Si ratios on structures and behaviors of NbSiCN nanocomposite films synthesized by reactive magnetron sputtering

Electronic Properties of Silicon-Nitride Films Deposited by Low-Energy Ion-Beam Bombardment

Effects of Ion Energy on Microstructure and Properties of IAD Metal Films

Surface Roughness, Mechanical Properties and Bonding Structure of Silicon Carbon Nitride Films Grown by Dual Ion Beam Sputtering

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment

Investigation of Carbon Nitride Films Deposited by Ion Beam-Assisted Deposition with Low Bombarding Energy of N Ions

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

Effects of Silicon Incorporation on Composition, Structure and Electric Conductivity of Cubic Boron Nitride Thin Films

Impact of H-Related Chemical Bonds on Physical Properties of SiNx:H Films Deposited via Plasma-Enhanced Chemical Vapor Deposition

Influence of Sputtering Process on the Deposition and Optical Properties of Sicn Films

Influences of substrate bias on the composition and structure of carbon nitride thin films prepared by ECR-plasma assisted pulsed laser deposition

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Effects of Nitrogen on Formation and Properties of Diamondlike Films Synthesized by Dual Ion Beam Deposition

Rate-Dependent Evolution of Microstructure and Stress in Silicon Films Deposited by Electron Beam Evaporation

Ultrathin Nitride Films Grown under Low-Energy Ion Bombardment