Characteristics of Nb2 O5 Thin Films Deposited by Ion Beam Sputtering

Yuan Wen-Jia,Zhang Yue-Guang,Shen Wei-Dong,Ma Qun,Liu Xu
DOI: https://doi.org/10.7498/aps.60.047803
IF: 0.906
2011-01-01
Acta Physica Sinica
Abstract:Optical properties, stress and microstructure of Nb-2 O-5 thin films prepared by ion beam sputtering (IBS) are investigated, and the effects of assist ion beam energy and ion current on characteristics of Nb-2 O-5 thin films are systematically discussed. The results show that with different parameters of assisted ion source, the refractive index changes from 2.310 to 2.276 and residual stress varies from -281 MPa to -152 MPa. The extinction coefficient of Nb-2 O-5 can be under 10(-4), and the surface is very smooth in an optimum deposition condition. Thin films deposited by IBS exhibit better optical properties and microstructures than those deposited by ion assisted deposition (IAD).
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