Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

Effects of Silicon Incorporation on Composition, Structure and Electric Conductivity of Cubic Boron Nitride Thin Films

Electrical Transport Properties Of The Si-Doped Cubic Boron Nitride Thin Films Prepared By In Situ Cosputtering

Study on Preparation and Electrical Properties of in Situ Si-Doped c-BN Films

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

The effects of low boron incorporation on the structural and optical properties of BxGa1−xN/SiC epitaxial layers

Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001)

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Structural Characteristics and Quantum Chemistry Calculation of Si-Doped Boron Carbides

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

The Effect of Doping on the Lattice Parameter and Properties of Cubic Boron Nitride

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Effects of C/Si ratios on structures and behaviors of NbSiCN nanocomposite films synthesized by reactive magnetron sputtering

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

Effect of heavily doping with boron on electronic structures and optical properties of β-SiC

Studying the growth of cubic boron nitride on amorphous tetrahedral carbon interlayers

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers