Study on Preparation and Electrical Properties of in Situ Si-Doped c-BN Films

Ying Jie,Fan Yaming,Tan Hairen,Shi Huiwei
DOI: https://doi.org/10.3969/j.issn.1671-4776.2010.07.005
2010-01-01
Abstract:The in situ Si-doped cubic boron nitride(c-BN)thin films were fabricated by ion beam assisted deposition.The influences of the ion flux,gas composition ratio and substrate temperature on the preparation of films were investigated systematically.The results show that the strength of energy ion bombardment has to be enhanced in order to keep the high c-BN content after the incorporation of Si.The c-BN content increases with the Ar content in gas constitute increasing.The moderate substrate temperature is essential to hold high c-BN content and good crystal quality,meanwhile it won't lead to excessive compressive stress of thin films.Electrical measurements indicate that Si-doped c-BN films have obvious semiconductor properties and electrical transport properties of amorphous semiconductors.
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