Abstract:Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 degrees C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 degrees C. It is found that the variations of the crystalline fraction f(c), bonded hydrogen content C(H), optical bandgap E(Tauc), film microstructure and growth rate R(d) are closely related to the substrate temperature. In particular, at a substrate temperature of 300 degrees C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63 nm s(-1), a low hydrogen content of 4.0 at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55 eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10 nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

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Structural Nature of Nanocrystalline Silicon

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Structure and Simulation of Hydrogenated Nanocrystalline Silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Theoretical Investigation of Structural Stability and Electronic Properties of Hydrogenated Silicon Nanocrystals: Size, Shape, and Surface Reconstruction

Study on structural properties of nanocrystalline silicon films

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Structure Of Nc-Si : H Films

Bonded Hydrogen in Nanocrystalline Silicon Photovoltaic Materials: Impact on Structure and Defect Density

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Enhancement of Thermal Conductivity of Hydrogenated Silicon Film by Microcrystalline Structure Growth

Structural Evolution of Nanocrystalline Silicon Thin Films Synthesized in High-Density, Low-Temperature Reactive Plasmas

The Synthesis and Structural Properties of Crystalline Silicon Quantum Dots Upon Thermal Annealing of Hydrogenated Amorphous Si-Rich Silicon Carbide Films

Effect Of Nitrogen And Hydrogen On The Crystallization Of Nanocrystalline Silicon Nitrogen Films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films