H-Induced Platelet And Crack Formation In Hydrogenated Epitaxial Si/Si0.98b0.02/Si Structures
lin shao,yuan lin,j g swadener,j k lee,q x jia,y q wang,m nastasi,phillip e thompson,n david theodore,t l alford,j w mayer,peng chen,s s lau
DOI: https://doi.org/10.1063/1.2163992
IF: 4
2006-01-01
Applied Physics Letters
Abstract:An approach to transfer a high-quality Si layer for the fabrication of silicon-on-insulator wafers has been proposed based on the investigation of platelet and crack formation in hydrogenated epitaxial Si/Si0.98B0.02/Si structures grown by molecular-beam epitaxy. H-related defect formation during hydrogenation was found to be very sensitive to the thickness of the buried Si0.98B0.02 layer. For hydrogenated Si containing a 130 nm thick Si0.98B0.02 layer, no platelets or cracking were observed in the B-doped region. Upon reducing the thickness of the buried Si0.98B0.02 layer to 3 nm, localized continuous cracking was observed along the interface between the Si and the B-doped layers. In the latter case, the strains at the interface are believed to facilitate the (100)-oriented platelet formation and (100)-oriented crack propagation. (c) 2006 American Institute of Physics.