Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Simulation of hydrogen evolution from nano-crystalline silicon

H Evolution from Nano-Crystalline Silicon-Comparison of Simulation and Experiment

Structure and Simulation of Hydrogenated Nanocrystalline Silicon

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

Microcrystalline And Nanocrystalline Silicon: Simulation Of Material Properties

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Modeling of hydrogen diffusion in silicon crystals

Simulation of the Void Shape Evolution of High-Temperature Annealed Silicon Structures by means of a Custom Level-Set Formulation

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Diffusion of hydrogen in crystalline silicon

Modelling of hydrogen transport in silicon solar cell structures under equilibrium conditions

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Robust Hydrogen Generation over Layered Crystalline Silicon Materials Via Integrated H2 Evolution Routes

Atomistic Character of Nanocrystalline and Mixed Phase Silicon

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Doping dependence of boron–hydrogen dynamics in crystalline silicon

Dynamics of hydrogen in silicon at finite temperatures from first-principles

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting