Abstract:Continuous requirement for the improvement of chip performance caused an increasing attention on the copper polishing precision. To predict the copper removal rate, it is critical to understand the copper removal mechanism and quantitatively decouple the chemical and mechanical interactions. In this paper, the copper removal mechanism was investigated by a single pad-asperity polishing test with an in situ measurement device, which minimized the effects of random pad-asperity contact states and slurry distribution differences encountered in conventional experiments. Several electrochemical methods were used to monitor the chemical reaction rate and passivation processes, including the chrono-current method, electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS). The results reveal that mechanical action can hardly remove the unreacted copper. The complexing agent can only dissolve the mechanically removed passivation layer rather than dissolve the passivation layer directly. The copper is removed in an alternating process of generation and removal of passivation layers. A model is developed to predict the copper removal depth within 10% error. This research provides a quantitative analysis method for material removal rate of metal polishing. It can answer whether chemical reaction or mechanical action limits the improvement of removal rate or causes the change of removal rate.

Study on the dishing of copper in CMP

Research on CMP Process Parameters Effect on Slurry Transport

Study on the defect of copper CMP

Analysis on Pad Effects in Chemical Mechanical Polishing

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Cu CMP Process Development and Characterization of Cu Dishing with 1.8 Μm Cu Pad and 3.6 Μm Pitch in Cu/SiO2 Hybrid Bonding

Analyzing the effects of pad asperity on chemical mechanical polishing of copper thin film wafer

Study on Copper CMP Slurry in ULSI Manufacturing

Characteristics in chemical-mechanical polishing of copper: comparison of polishing pads

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

TSV CMP process optimization and dishing defect reduction

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

Comparison of Polishing Pad Characteristics in Copper-interconnect Chemical Mechanical Polishing of 300 Mm Wafer

Contribution of Porous Pad to Chemical Mechanical Polishing

Copper chemical mechanical polishing using a slurry-free technique

Investigation of thermal effects in copper chemical mechanical polishing

Analysis on Contact and Flow Features in CMP Process

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Study on the CMP Pad Life with Its Mechanical Properties