Study on Copper CMP Slurry in ULSI Manufacturing

ZHOU Guo-an,WANG Xue-jun,LIU Bing,QIN Qiu

DOI: https://doi.org/10.3969/j.issn.1004-4507.2008.02.002

2008-01-01

Abstract:The development trend and demand of interlayer medium CMP are discussed. Material removal process of copper CMP and the important effect of slurry are analyzed. At the end of the paper, the research and development trends for copper CMP and the slurry are introduced.

What problem does this paper attempt to address?

Research on CMP Process Parameters Effect on Slurry Transport

ZW Shen,JL Yuan,B Lin,JJ Zheng,J Ruan,LB Zhang

DOI: https://doi.org/10.4028/www.scientific.net/kem.202-203.281

2001-01-01

Key Engineering Materials

Abstract:This paper describes factors influencing slurry flow beneath a wafer during CMP processes. Results from a statistically designed experiment show that platen speed, pad topography and slurry flow rate are all factors that influence the mean residence time of slurry beneath a wafer, In addition, these factors show significant interactions with each other. The amount of mixing beneath the wafer was shown to be a function only of the pad groove depth and the slurry flow rate. In pad conditioning also was shown to have a significant effect on the slurry mixing and the slurry mean residence time beneath the wafer.
A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

SJ Li,LZ Sun,S Tsai,FQ Liu,L Chen

DOI: https://doi.org/10.1109/iitc.2001.930039

2001-01-01

Abstract:Traditional slurry copper (Cu) CMP processes have disadvantages in terms of dishing, erosion, Cu and oxide losses, micro-scratches and cost due in part to the presence of abrasive particles during polishing. A stable abrasive-free (AF) Cu CMP process and a low-abrasive barrier removal process have been developed. With these processes it has been possible to repeatably demonstrate metal-residue free wafers with low dishing, low erosion, low metal and oxide losses, over-polishing insensitivity, and low cost.
A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits

Han Yan,Xinhuan Niu,Minghui Qu,Fu Luo,Ni Zhan,Jianghao Liu,Yida Zou

DOI: https://doi.org/10.1007/s00170-022-10775-2

2023-01-04

Abstract:When the integrated circuit (IC) feature size is reduced to 0.13 μm and below, copper (Cu) becomes the new wiring material in interconnect materials. The double damascene process is the only process for Cu patterning that is mature and has been successfully applied to IC manufacturing, so Cu interconnection chemical–mechanical polishing (CMP), which can achieve the surface nanoscale accuracy required by lithography level, is of great importance to the IC industry. The slurry is the most important component of the CMP materials and has a significant impact on the surface quality of the polished wafer. Therefore, how to select suitable additives to improve the chemical effect and obtain excellent post-polishing surface and good slurry stability while saving cost is an urgent issue to be considered. The research progress of each component in Cu interconnection slurry was discussed in this paper, mainly focusing on the advantages and disadvantages of acidic and alkaline slurries, and the research progress of oxidants, complexing agents, surfactants, and corrosion inhibitors as well as their respective action mechanisms were analyzed in detail, which will be a great contribution to the IC field. It will facilitate the optimization of the slurry for further development of new Cu interconnection CMP slurry.

engineering, manufacturing,automation & control systems
Copper chemical mechanical polishing using a slurry-free technique

V.H. Nguyen,A.J. Hof,H. van Kranenburg,P.H. Woerlee,F. Weimar

DOI: https://doi.org/10.1016/s0167-9317(00)00461-5

IF: 2.3

2001-03-01

Microelectronic Engineering

Abstract:A study of the chemical mechanical polishing (CMP) of thin copper films using fixed-abrasive pads is presented. The composition of the polishing solution is optimized by investigating the impact of both the oxidizer concentration and the pH of the solution on the polishing characteristics of copper. The resulting optimum polishing solution gives a high removal rate (>300 nm/min), good uniformity (standard deviation 3%) and a very high selectivity for the oxide removal rate (>100:1). The dependence of the removal rate of copper on the geometry is studied for different feature sizes and various pattern densities. The geometry dependency is considerably less in the slurry-free process than in the conventional slurry CMP. This is crucial for copper CMP because it helps to minimize the overpolishing time and consequently the amount of dishing. Damascene copper structures have been successfully made by polishing patterned test wafers. The amount of dishing of the copper lines is smaller than that for the conventional polishing technique. The polished wafers were easily cleaned; a standard rinsing step seemed to be sufficient.

engineering, electrical & electronic,nanoscience & nanotechnology,optics,physics, applied
Chemical Mechanical Planarization of Copper Using Ethylenediamine and Hydrogen Peroxide Based Slurry

Ping Liu,Xinchun Lu,Yuhong Liu,Jianbin Luo,Guoshun Pan

DOI: https://doi.org/10.1007/978-3-642-03653-8_311

2009-01-01

Abstract:Chemical-mechanical planarization (CMP) of copper is a committed step hi the IC manufacturing. In this work, the slimy including ethylenediamine and hydrogen peroxide was studied. Result showed that the material removal rate of copper increased with the concentration of ethylenediamine, and the effect of the concentration of hydrogen peroxide was also studied. When the concentration of ethylenediamine was 100mM/L, with the concentration of 0.6% hydrogen peroxide, we got a high material removal rate, that is 1899mn/min. Some corrosion inhibitors like benzotriazole and potassium sorb ate were added to the slurry to improve the surface after CMP.
An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

Zhan Liu,Qing Tian,Junhui Li,Xiaohe Liu,Wenhui Zhu

DOI: https://doi.org/10.1109/tsm.2019.2923427

IF: 2.7

2019-08-01

IEEE Transactions on Semiconductor Manufacturing

Abstract:The goal of chemical mechanical polishing (CMP) is to achieve a flat and smooth surface for through silicon via (TSV) application. In order to obtain high efficiency and high quality copper CMP process, we have developed copper CMP slurry with optimal component ratio of peroxide, citric acid, benzotriazole, and silica particle. A high-resolution surface profile measuring instrument combined with other measurements is used to analyze the CMP performance of TSV. In addition, the chemical reaction mechanism in slurry for removal copper has been discussed considering surface adsorption. It is revealed that the polishing time increases with decreasing content of oxidizing agent peroxide. The polishing speed for silica particle mixed slurry is accelerated comparing with the conventional slurry. The polishing time becomes longer with increasing value of pH owing to declining sharply of free hydrogen ion in slurry solution. Further, the high quality of polishing appears on the wafer with smooth and glossy surface of copper by applying fast and slow slurry, which is contributed to reduction of the chemical polishing and enhancement of the mechanical polishing. The optimized polishing slurry prepared in this paper and the proposed two-stage polishing technique can achieve high quality copper surface polishing while greatly improving polishing efficiency.

engineering, manufacturing, electrical & electronic,physics, condensed matter, applied
Study on the defect of copper CMP

ZHOU Guo-an,LIU Bin,WANG Xue-Jun,CHONG Bao-chun

DOI: https://doi.org/10.3969/j.issn.1004-4507.2008.10.007

2008-01-01

Abstract:First, the paper analysis the copper’s leading role in the future chip, then to expound the structure of the copper wiring. That is Ta as barrier and copper as line, which polish mode suit preston’s equation; under the primary polishing circumstance, to use Al2O3 as slurry; under the finial polishing circumstance. To use Wu Yahong’s advice ,and we use low speed and high down force rotary CMP to polish wafers. We find the whole wafer still have great WIWNU. to study 100um line width, we find the dishing defects will gradually decrease but in the end there will be a small increase. Ero- sion of the entire chip will be directly pro rata to the density of the wafer, but distribution in the same kind of circumstance ,the long polishing time will have the greater erosion. at the end of the paper, conclusion that the trend of the CMP which is base on high speed and low down pressure can efficiency the WIWTU, but the copper line failure analyze still be a major significance task.
Slurry System Establishment and Optimization for Advanced Cobalt Interconnect Metallization

Lifei Zhang,Tongqing Wang,Xinchun Lu

DOI: https://doi.org/10.1109/cstic58779.2023.10219262

2023-01-01

Abstract:Performing a chemical mechanical polishing (CMP) process for copper (Cu) interconnect metallization with cobalt (Co) diffusion barrier layer is well developed. However, the research on CMP process and associated polishing slurry system for Co as a novel interconnect wiring metal for sub-7 nm semiconductor device nodes, is still in its infancy. In this study, the establishment and optimization process of polishing slurry system for advanced Co interconnects have been presented on the foundation of a variety of mechanism analysis, including electrochemical survey, X-ray photoelectron spectroscopy measurement, surface wettability characterization, and adsorption isotherm calculation. As application verification, the final proposed CMP slurries for Co interconnects demonstrate the satisfactory material removal rates (MRR), excellent polished surface qualities, minimized particle residues, and flawless microstructures without galvanic corrosion.
Research Progress of Material Removal Mechanism in Chemical Mechanical Planarization for Metal Interconnection Layer of Chips

HANG Tao,CHANG Pengfei,LI Ming

DOI: https://doi.org/10.3901/jme.2022.02.147

2022-01-01

Journal of Mechanical Engineering

Abstract:：Chemical mechanical planarization, known as CMP, is one of the key technologies in chip manufacturing and is widely used to achieve the ultrafine planarization of a variety of structures on the nanometer scale.The metals in interconnection layer exhibits quite different properties from the materials in other structures in chips, whose planarization relies more on the chemical components in the polishing slurry.The synergistic mechanism depicts the process of material removal in metal CMP：the surface of the interconnection layer is first chemically modified by the chemical components in the slurry, followed by the subsequent mechanical abrasion and then removed away.Based on the mechanism, the review highlights the contact mechanics which studies the microscopic states and functions of the abrasive particles and the developments of related models; elaborates the roles of the chemical components including oxidizers, complexing agents and inhibitors, and the process and principle of their reactions with metals; summarizes the latest progress and tendency of slurry development.It is expected that it could provide insight on the future slurry developed for new process and materials, so as to achieve the desired material removal rate, superfine planarization and ultra-low defects requirements under different situations during the rapid advancement of the semiconductor manufacturing.
Slurry components in metal chemical mechanical planarization (CMP) process: A review

Dasol Lee,Hyunseop Lee,Haedo Jeong

DOI: https://doi.org/10.1007/s12541-016-0201-y

IF: 2.0411

2016-12-01

International Journal of Precision Engineering and Manufacturing

Abstract:Chemical mechanical planarization (CMP) is a wet polishing technique employed to smooth the surface of various materials using a combination of chemical and mechanical forces to achieve finer and longer lines on semiconductor devices. Among the published papers related to CMP, the CMP metal slurry has been the primary focus, and it appears to be the main driver to improve the CMP performance and quality for next-generation devices. Slurry can affect the removal rate, uniformity, defects, and selectivity between the metal and the barrier layer. The material-removal mechanism of metal CMP is determined by the chemical reaction due to chemical solutions compared to the mechanical action, which is due to the abrasiveness of the slurry. We verify that for each user, a chemical knowledge of slurry is required to obtain preferred results. The basic chemical factors of metal CMP slurry are oxidizers, chelating agents, and corrosion inhibitors. This review focuses on the role and effectiveness of each chemical solution by considering the electrochemical characteristics. It will assist in determining the most appropriate solution to further the development of new slurry for next-generation metal CMP.

engineering, mechanical, manufacturing
Study on the dishing of copper in CMP

ZHOU Guo-an,ZHANG Zhi-jun,ZHAN Yang

DOI: https://doi.org/10.3969/j.issn.1004-4507.2008.12.005

2008-01-01

Abstract:In this paper, the author concrete analysis the dishing of copper not due to the bending of the pad, but with the topography of the pad. The author analysis the CMP setup, and point out the possible reasons. The author builds the models of dishing. To compare with copper dishing resistance actual measurement and theoretical values, find the resistance with dishing is larger than theoretical, and with the increase of copper linewidth, the dishing is also increasing trend of defects. The author compare with selective and non-selective slurry, find the selective one is important factor to cause dishing. Finally the author do the integrated technology experiment, make sure both the selective slurry and topography of pad are the main factor to form dishing
Key Technologies for Copper Interconnections in ULSI

Guo-hai ZHANG,Yang XIA,Shi-bing LONG,He QIAN

DOI: https://doi.org/10.3969/j.issn.1004-3365.2001.02.019

2001-01-01

Abstract:The process of copper interconnections in ULSI and its development are described in this paper. Furthermore, the key technologies, such as barrier selection, copper deposition and chemical mechanical polishing(CMP) are analyzed and discussed in detail.
Chemical processes in the chemical mechanical polishing of copper

J.M. Steigerwald,S.P. Murarka,R.J. Gutmann,D.J. Duquette

DOI: https://doi.org/10.1016/0254-0584(95)01516-7

IF: 4.778

1995-08-01

Materials Chemistry and Physics

Abstract:The mechanisms by which removal and planarization occur during the chemical mechanical polishing (CMP) of copper, used for pattern delineation in a multilevel metallization scheme, are investigated in this paper. We propose that removal occurs as mechanical abrasion of the surface followed by chemical dissolution of the abraded species. Planarization is achieved by the use of a rigid polishing pad that provides mechanical abrasion only to the high areas on the copper surface and by the formation of a surface layer on the copper during polishing to prevent dissolution of copper in the low areas. Fundamentals of electrochemistry are used to explain and predict both the dissolution of copper and the formation of a surface layer in the CMP slurry. Examples of polishing slurries are presented to demonstrate our hypotheses, including a complexing agent (ammonia) plus oxidizer (ferricyanide ion or nitrate ion) slurry and an oxidizing acid (nitric acid) plus corrosion inhibitor (benzotriazole) slurry. Finally, the mechanisms used to explain the CMP of copper are used to explain anomalous behavior during the CMP of titanium, in which the presence of copper ions in the polish slurry accelerates the polish rate of titanium. Titanium is used as a diffusion barrier and adhesion promoter for copper.

materials science, multidisciplinary
Chemical effects on the tribological behavior during copper chemical mechanical planarization

jing li,yuhong liu,tongqing wang,xinchun lu

DOI: https://doi.org/10.1016/j.matchemphys.2014.12.033

IF: 4.778

2015-01-01

Materials Chemistry and Physics

Abstract:Copper chemical mechanical polishing/planarization (CMP) is subject to mechanical actions by abrasive wear coupled with simultaneous chemical effects via slurries at the wafer/pad interface. Therefore, it is necessary to investigate slurry chemical effects on the contact interface. The chemical roles of friction as functions of slurry pH during copper CMP process were studied. The wettability and particle size of the slurry had non-dominant influence on the friction force of the polishing interface. According to OCP measurements, XPS and Raman analysis, chemical reactions occurring on the polishing interface led to varying the tribology behavior during CMP process. The formation of Cu-BTA complex under acidic conditions increased the coefficients of friction (COF), while chemical dissolution under alkaline conditions resulted in lower COF. The results provide more understanding of tribological principles and further optimization of the CMP process.
Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

Jing Li,Yuhong Liu,Xinchun Lu,Jianbin Luo,Yuanjing Dai

DOI: https://doi.org/10.1007/s11249-012-0037-2

2012-01-01

Tribology Letters

Abstract:The material removal in chemical–mechanical planarization/polishing (CMP) of copper involves both chemical and mechanical effects. The roles of chemical corrosion, abrasive wear, and their synergistic effects on the material removal mechanism were studied by electrochemical analysis and nano-scratching method using atom force microscopy, respectively. Combining with the results of CMP experiments, dominant factors (chemistry and mechanics) in slurries within the range of pH 3.0–10.0 were assessed. Consequently, a removal mechanism map of copper CMP depending on pH values was constructed. In the alkaline slurry, the wear–corrosion effect predominated in the material removal at pH 8.0 and 9.0; while the copper removal mechanism changed to corrosion–wear action in the acidic slurry from pH 4.0 to 6.0, and good surface quality was also obtained. The results and the strategies provide thorough understanding of the material removal mechanism and further optimization of the CMP process.
Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

Jing Li,Yuhong Liu,Yan Pan,Xinchun Lu

DOI: https://doi.org/10.1016/j.apsusc.2013.12.150

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:In order to optimize the existing slurry for low down-pressure chemical mechanical polishing/planarization (CMP), copper CMP was conducted in H2O2 based slurries with benzotriazole (BTA) and glycine at different pH values. The film composition was investigated by the Nano Hardness Tester and XPS tests. Furthermore, the film structure forming on the copper surface at different pH values was investigated by adopting electrochemical impedance spectroscopy (EIS) technology. In the acidic slurry, discontinuous and porous BTA film covering the Cu/Cu2O surface enhanced the mechanical effect during Cu CMP process, resulted in highest CMP removal rate. In neutral slurry, the lowest CMP removal rate and static corrosion rate were resulted from compacted passivation film on the copper surface. In the alkaline slurry, the mechanical effect was limited by the rapid chemical dissolution. The results will benefit optimization of the slurry and operate conditions during low down-pressure CMP process. (C) 2014 Elsevier B.V. All rights reserved.
Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Haidong Feng,Min‐Yuan Cheng,Y. Y. Wang,Chi‐Chao Wan

2006-01-01

Abstract:The behaviors of various electroplated copper films during CMP are important for removal mechanism and defect generation. This article was to study the characteristics of various copper films during CMP, including impurity effect and current density effect. Potentiodynamic polarization method was used to understand the removal behaviors. XRD and SIMS were applied to investigate the film texture and impurity content. Defect performance was decided in optical scan method and SEM reviewing. The research showed that (111)/(200) texture ratio determined removal rate and voids located in grain boundaries. Removal rate and void defects decreased with increasing (111)/(200) ratio. High (111)/(200) ratio has strong chemical resistance during polishing because (111) is the closed packed plane in the fcc structure. For impurity study, carbon and sulfur are impure atoms to weaken Cu grain boundaries to generate more void defects, but are insufficient to determine the removal rate. Furthermore, a novel phenomenon was observed that interconnect surface generate copper extrusion with time after polishing. AES proved that the sulfur content of grain boundaries induce this reaction. Based on above studies, we attempt to describe the relation between copper film properties and polishing performance.
Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Jie Cheng,Tongqing Wang,Zhimin Chai,Xinchun Lu

DOI: https://doi.org/10.1007/s11249-015-0474-9

2015-03-10

Tribology Letters

Abstract:Abstract Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodate-based slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wear-accelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wear-accelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (ΔIc/Icc) could help to obtain a better surface quality and desirable material removal rate during CMP.

engineering, chemical, mechanical
The Influence of Slurry Containing Polystyrene Particles on Copper Chemical Mechanical Planarization

Gong Jianfeng,Pan Guoshun,Dai Yuanjing,Liu Yan

DOI: https://doi.org/10.3969/j.issn.0254-0150.2010.07.001

2010-01-01

Abstract:The application of copper and low-k materials in the manufacture of integrate circuit(IC) creates more challenges in the surface planarization(CMP) process.In order to improve the planarization efficiency of Cu-CMP,the polystyrene(PS) organic particles were utilized as abrasive in the slurry.The influence of oxidant,complex reagent,pH,diameter and the concentration of abrasive on Cu-CMP,and the chemical effects of PS particles in the slurry were analyzed via static erosion and electrochemistry approaches.The results show that when PS particles are used as abrasive,H2O2 and glycine are used as oxidant and complex reagent respectively,a large copper removal rate of 1 μm/min can be achieved.The appearance of PS particles in the slurry enhances the chemical corrosion effect on copper surface.
Investigation of thermal effects in copper chemical mechanical polishing

Pengzhan Liu,Sunghoon Bae,Seokjun Hong,Chulwoo Bae,Hyeonmin Seo,Jungryul Lee,Cheng Tang,Taesung Kim

DOI: https://doi.org/10.1016/j.precisioneng.2021.08.022

IF: 3.315

2022-01-01

Precision Engineering

Abstract:With the demand for manufacturing large (e.g., 450 mm) wafers, problems arise due to temperature increases associated with the chemical mechanical polishing (CMP) process. Various methods have been employed to stabilize the in-situ polishing temperature. The use of a high-temperature slurry can improve the removal rate, but a degradation in surface morphology occurs during the copper CMP procedure. To explain this mechanism, the effects of temperature on the slurry, CMP pad, and copper wafer were separately investigated. A temperature of approximately 40 ºC was demonstrated to be a suitable choice when considering polishing efficiency and quality, thereby facilitating the rapid production of semiconductors. Particle aggregation was also observed with a rise in temperature. The work presented here may allow for a reduction in defects during low-hardness material polishing.

English Else

Study on Copper CMP Slurry in ULSI Manufacturing

Research on CMP Process Parameters Effect on Slurry Transport

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits

Copper chemical mechanical polishing using a slurry-free technique

Chemical Mechanical Planarization of Copper Using Ethylenediamine and Hydrogen Peroxide Based Slurry

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

Study on the defect of copper CMP

Slurry System Establishment and Optimization for Advanced Cobalt Interconnect Metallization

Research Progress of Material Removal Mechanism in Chemical Mechanical Planarization for Metal Interconnection Layer of Chips

Slurry components in metal chemical mechanical planarization (CMP) process: A review

Study on the dishing of copper in CMP

Key Technologies for Copper Interconnections in ULSI

Chemical processes in the chemical mechanical polishing of copper

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

The Influence of Slurry Containing Polystyrene Particles on Copper Chemical Mechanical Planarization

Investigation of thermal effects in copper chemical mechanical polishing