Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

Optical Optimization and Simulation of Micro-bolometers Based on Α-Si:H Thin Film

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

OPTICAL AND THERMAL DESIGN FOR MICROBOLOMETER

Study on new structure uncooled a-Si microbolometer for infrared detection

The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film

Vanadium Oxide Thermal Sensitive Thin Film with TiN Absorbing Layer for Uncooled Infrared Bolometer

Design and Simulation of Microbolometer with Dual Cavity for High Figure of Merits

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Study on Performance of Si3N4 Enhanced Microbolometer with Salicided Polysilicon Thermistor in CMOS Technology

Thin Film Like Terahertz Bolometric Detector on Bi2212 Single Crystal

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

Wavelength and Thermal Distribution Selectable Microbolometers Based on Metamaterial Absorbers

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Performance Enhancement of CMOS Microbolometer with Metal-Insulator-Metal Absorbers

Diode-based Microbolometer with Performance Enhanced by Broadband Metamaterial Absorber.

Responsivity Enhancement of CMOS Microbolometer with Two-Dimensional Al Grating

Nano-thermoelectric infrared bolometers

Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes

Optimization Design of Uncooled Amorphous Silicon Thin Film Transistor Infrared Detector

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.