Abstract:Reduction in the size, weight, and power consumption of an infrared (IR) detection system (referred to as SWaP) is one of the critical challenges lying ahead for the development of nowadays IR detector technology, especially for Mid-/Long-wavelength IR wavebands, which calls for high operating temperature (HOT) IR photodetectors with good sensitivity that would ease the burden for the cooling systems. Emerging as strong competitors to HgCdTe detectors, antimonide (Sb)-based IR photodetectors and focal plane array (FPA) imagers have gradually stepped into real world applications after decades of development, thanks to their outstanding material properties, tunability of cut-off wavelengths, feasibility of device designs, and great potentials for mass production with low costs. Meanwhile, emerging demands of versatile applications seek for fast, compact and smart IR detection systems, in which integration of Sb-based IR photodetectors on the Si platform enables the direct information readout and processing with Si based microelectronics. This paper reviews recent progress in Sb-based HOT IR photodetectors and FPAs, which includes the fundamental material properties and device designs based on the bulk InAsSb, InAs/GaSb and InAs/InAsSb type-II superlattices, together with the cutting-edge performance achieved. This work also covers the new trends of development in the Sb-based IR photodetectors like optical engineering for signal harvesting, photonic integration techniques, as well as MOCVD growth of antimonides. Finally, challenges and possible solutions for future works are provided from the perspectives of material growth, device design and imaging system. These new advances may cast light on designs and strategies for achieving HOT devices at thermoelectric cooling temperatures (yet with lower costs) by identifying existing challenges, and find more extensive emerging applications.

Optimization Design of Uncooled Amorphous Silicon Thin Film Transistor Infrared Detector

A Uncooled A-Si Infrared Detector with Novel Thermal Isolation Method.

A Uncooled Α-Si Infrared Detector Using Polyimide As Thermal Isolation Layer

Study on new structure uncooled a-Si microbolometer for infrared detection

Thermal Behavior of Amorphous Silicon Thin Film Transistor and Its Application to Micromachined Uncooled Infrared Sensors

Novel Micromachined Uncooled Infrared Detector Employing A-Si:H TFT As Thermosensitive Element

Freestanding A-Si Thin Film Transistor for Room-Temperature Infrared Detection

Design and Fabrication of Single-Chip A-Si TFT-based Uncooled Infrared Sensors

Design and Simulation of Infrared Absorption Based on Hydrogenated Amorphous Silicon Thin Film

An Uncooled Microcantilever IR Detector Based on Bulk Silicon Technique

Fabrication and Characterization of Integrated Uncooled Infrared Sensor Arrays Using A-Si Thin-Film Transistors As Active Elements

Design and thermodynamic analysis on capacitive uncooled IR detector

An uncooled optically readable infrared imaging detector

Design, fabrication, and characterization of a high-performance CMOS-compatible thermopile infrared detector with self-test function

Optimal design of optomechanical uncooled infrared focal plane array with integrated metalens

Optimization of (100)-Si TMAH Etching for Uncooled Infrared Detector

Fabrication of Thermal Insulation Structure for Uncooled Pyroelectric Thin Film IR Detector

A Novel Opto-Mechanical Uncooled Infrared Detector

Antimonide-based High Operating Temperature Infrared Photodetectors and Focal Plane Arrays: A Review and Outlook

Combined Design and Realization of Al-SiN Bi-Material Optic Readout Infrared Focal Plane Array with 320 × 240 Pixels

Optical Optimization and Simulation of Micro-bolometers Based on Α-Si:H Thin Film