Design and Fabrication of Single-Chip A-Si TFT-based Uncooled Infrared Sensors

L Dong,RF Yue,LT Liu,X Su

DOI: https://doi.org/10.1016/j.sna.2004.04.030

IF: 4.291

2004-01-01

Sensors and Actuators A Physical

Abstract:This paper reports the theory, fabrication and testing of a novel single-chip uncooled infrared (IR) sensor using amorphous silicon thin film transistors (a-Si TFTs) as the sensing elements. The measured temperature coefficient of drain current of the fabricated a-Si TFT is about 4.8%/K at 23°C. An integration scheme of combining a standard IC process sequence for forming n-MOSFETs with porous silicon micromachining process is described. Experimental results show that the a-Si TFT-based uncooled IR sensor has a responsivity of over 40kV/W, a detectivity of over 108cmHz1/2W−1, a thermal response time of 9.1ms and a noise equivalent temperature difference of below 0.1°C at a chopping frequency of 30Hz.