Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

Study on new structure uncooled a-Si microbolometer for infrared detection

Monolithic Uncooled 8 × 8 Bolometer Arrays Based on Poly-SiGe Thermistor

Fabrication and Characterization of Integrated Uncooled Infrared Sensor Arrays Using A-Si Thin-Film Transistors As Active Elements

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

Development of Linear Uncooled Microbolometer Array Made of Poly-SiGe Film

Monolithic Dielectric BST Infrared Sensor Arrays Using a Novel Silicon-Ferroelectric Integration Scheme Based on Improved Porous Silicon Micromachining

An Uncooled Microbolometer Infrared Detector Based on Polycrystalline Silicon Germanium Thin Film

Thermal Behavior of Amorphous Silicon Thin Film Transistor and Its Application to Micromachined Uncooled Infrared Sensors

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

OPTICAL AND THERMAL DESIGN FOR MICROBOLOMETER

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology with a Grating Structure

Design and Fabrication of Single-Chip A-Si TFT-based Uncooled Infrared Sensors

Diode-based Microbolometer with Performance Enhanced by Broadband Metamaterial Absorber.

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes

Thin Film Like Terahertz Bolometric Detector on Bi2212 Single Crystal

Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection