Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

Monolithic Uncooled 8 × 8 Bolometer Arrays Based on Poly-SiGe Thermistor

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Development of Linear Uncooled Microbolometer Array Made of Poly-SiGe Film

An Uncooled Microbolometer Infrared Detector Based on Polycrystalline Silicon Germanium Thin Film

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection

Studies on Poly Si_(0.7)Ge_(0.3) Films Deposited by UHVCVD as Thermal Sensitive Material for Bolometer

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

Thermoelectric bolometers based on ultra-thin heavily doped single-crystal silicon membranes

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Optical Temperature Sensor Based on Polysilicon Waveguides

Ternary FePSe3 Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Bias-tunable temperature coefficient of resistance in Ge transistors

Ternary FePSe 3 Atomic Layers with Competitive Temperature Coefficient of Resistance for Uncooled Infrared Bolometers

Boron-doped nanocrystalline silicon germanium thin films for uncooled infrared bolometer applications

Sub-10mK-Resolution Thermal-Bolometric Integrated FET-Type Sensors Based on Layered Bi2O2Se Semiconductor Nanosheets

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

Low noise high-Tc superconducting bolometers on silicon nitride membranes for far-infrared detection

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

An Infrared Readout Circuit with On-chip Compensation