Abstract:State-of the-art infrared photodetectors operating in the mid- and long-wavelength infrared (MWIR and LWIR) are largely dominated by cryogenically cooled quantum sensors when the target is the highest sensitivity and detection speeds. Nano-thermoelectrics provide a route towards competitive uncooled infrared bolometer technology that can obtain high speed and sensitivity, low-power operation, and cost-effectiveness. We demonstrate nano-thermoelectric LWIR bolometers with fast and high-sensitivity response to LWIR around 10 $\mu$m. These devices are based on ultra-thin silicon membranes that utilize the dimensional scaling of silicon nanomembranes in thermoelectric elements and are combined with metallic nanomembranes with subwavelength absorber structures. The fast device performance stems from a low heat capacity design where the thermoelectric beams act both as mechanical supports and transducer elements. Furthermore, by scaling down the thickness of the thermoelectric beams the thermal conductivity is reduced owing to enhanced phonon boundary scattering, resulting in increased sensitivity. The nano-thermoelectric LWIR bolometers are based on 40-nm-thick n- and p-type silicon membranes with LWIR (voltage) responsivities up to 1636 V/W and 1350 V/W and time constants in the range of 300-600 $\mu$s, resulting in specific detectivities up to $1.56\times10^8$ cmHz$^{1/2}$/W. We also investigate the use of a heavily doped N++ substrate to increase optical cavity back reflection, resulting in an increased Si substrate reflectance from 30% to 70%-75% for wavelengths between 8-10 $\mu$m, resulting in an increase in device responsivity by approximately 20%.

Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

An Uncooled Microbolometer Infrared Detector Based on Polycrystalline Silicon Germanium Thin Film

Development of Linear Uncooled Microbolometer Array Made of Poly-SiGe Film

Studies on Poly Si_(0.7)Ge_(0.3) Films Deposited by UHVCVD as Thermal Sensitive Material for Bolometer

Monolithic Uncooled 8 × 8 Bolometer Arrays Based on Poly-SiGe Thermistor

Study on new structure uncooled a-Si microbolometer for infrared detection

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Calculation of thermal parameters of SiGe microbolometers

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

Germanium nanowire microbolometer

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Infrared Bolometers Based on 40-nm-Thick Nano-Thermoelectric Silicon Membranes

The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology with a Grating Structure

Optical Temperature Sensor Based on Polysilicon Waveguides