Abstract:The micro-bolometer is important in the field of infrared imaging, although improvements in its performance have been limited by traditional materials. SiGe/Si multi-quantum-well materials (SiGe/Si MQWs) are novelty thermal-sensitive materials with a significantly high TCR and a comparably low 1/f noise. The application of such high-performance monocrystalline films in a micro-bolometer has been limited by film integration technology. This paper reports a SiGe/Si MQWs micro-bolometer fabrication with heterogeneous integration. The integration with the SiGe/Si MQWs handle wafer and dummy read-out circuit wafer was achieved based on adhesive wafer bonding. The SiGe/Si MQWs infrared-absorption structure and thermal bridge were calculated and designed. The SiGe/Si MQWs wafer and a 320 × 240 micro-bolometer array of 40 μm pitch L-type pixels were fabricated. The test results for the average absorption efficiency were more than 90% at the wavelength of 8–14 μm. The test pixel was measured to have a thermal capacity of 1.043 × 10−9 J/K, a thermal conductivity of 1.645 × 10−7 W/K, and a thermal time constant of 7.25 ms. Furthermore, the total TCR value of the text pixel was measured as 2.91%/K with a bias voltage of 0.3 V. The SiGe/Si MQWs micro-bolometer can be widely applied in commercial fields, especially in early medical diagnosis and biological detection.

DESIGN OF MICROBOLOMETER BY POLYCRYSTALLINE SILICON IN STANDARD CMOS TECHNOLOGY

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

A Cmos Vertically Integrated Device for Monochromatic Spectrum Detection

A Cmos Image Sensor For Monochromatic Spectrum Imaging

Performance-Enhanced Polysilicon Microbolometer in CMOS Technology with a Grating Structure

High-performance microbolometers with metal-insulator-metal plasmonic absorbers in CMOS technology

A High Linearity Readout Integrated Circuit for Uncooled IR Detector

A High-Sensitivity and Large-Dynamic Range Readout Circuit for Polysilicon-Based Microbolometer

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration

Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process

An Uncooled Microbolometer Infrared Detector Based on Polycrystalline Silicon Germanium Thin Film

Multi-band Microbolometer in CMOS Technology

Process Optimization and Performance Improvement of CMOS Microbolometer with A Salicided Polysilicon Thermistor

Development of Linear Uncooled Microbolometer Array Made of Poly-SiGe Film

Study on Performance of Si3N4 Enhanced Microbolometer with Salicided Polysilicon Thermistor in CMOS Technology

Monolithic Uncooled 8 × 8 Bolometer Arrays Based on Poly-SiGe Thermistor

The Performance Enhancement of Polysilicon Microbolometer in Standard CMOS Technology with Si3N4 Film

Optical Temperature Sensor Based on Polysilicon Waveguides

Integrated A-Si : B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques